AO6604 datasheet(8/9 Pages) AOSMD

Part #	AO6604

Description	20V Complementary MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

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8 / 9 page

AO6604

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

1

2

3

4

5

0

2

4

6

8

10

Q

g (nC)

Figure 7: Gate-Charge Characteristics

0

200

400

600

800

1000

1200

1400

0

5

10

15

20

-V

DS (Volts)

Figure 8: Capacitance Characteristics

C

iss

C

oss

C

rss

V

DS=-10V

I

D=-2.5A

1

10

100

1000

0.00001

0.001

0.1

10

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

to-Ambient (Note F)

T

A=25°C

0.0

0.1

1.0

10.0

100.0

0.01

0.1

1

10

100

-V

DS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

µs

10s

1ms

DC

R

DS(ON)

limited

T

J(Max)=150°C

T

A=25°C

100

µs

10ms

0

1

2

3

4

5

0

2

4

6

8

10

Q

g (nC)

Figure 7: Gate-Charge Characteristics

0

200

400

600

800

1000

1200

1400

0

5

10

15

20

-V

DS (Volts)

Figure 8: Capacitance Characteristics

C

iss

C

oss

C

rss

V

DS=-10V

I

D=-2.5A

1

10

100

1000

0.00001

0.001

0.1

10

1000

Pulse Width (s)

Figure 10: Single Pulse Power Rating Junction-

to-Ambient (Note F)

T

A=25°C

0.0

0.1

1.0

10.0

100.0

0.01

0.1

1

10

100

-V

DS (Volts)

Figure 9: Maximum Forward Biased Safe

Operating Area (Note F)

10

µs

10s

1ms

DC

R

DS(ON)

limited

T

J(Max)=150°C

T

A=25°C

100

µs

10ms

0.001

0.01

0.1

1

10

0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

T

on

T

P

D

Single Pulse

D=T

on/T

T

J,PK=TA+PDM.Z

θJA.RθJA

RθJA=150°C/W

Rev 4: Sep 2010

www.aosmd.com

Page 8 of 9

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