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AO7415 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AO7415 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AO7415 Symbol Min Typ Max Units BVDSS -20 V VDS=-20V, VGS=0V -1 TJ=55°C -5 IGSS ±10 µA VGS(th) Gate Threshold Voltage -0.5 -0.85 -1.2 V ID(ON) -13 A 80 100 TJ=125°C 115 98 125 m Ω 130 170 m Ω gFS 5 S VSD -0.76 -1 V IS -1 A Ciss 250 325 400 pF Coss 40 63 85 pF Crss 22 37 52 pF Rg 11.2 17 Ω Qg 3.2 4.5 nC Qgs 0.6 nC Qgd 0.9 nC tD(on) 11 ns t 5.5 ns Turn-On Rise Time Gate Drain Charge Turn-On DelayTime Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-2A Gate Source Charge Reverse Transfer Capacitance VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS Gate resistance VGS=0V, VDS=0V, f=1MHz m Ω Static Drain-Source On-Resistance Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance DYNAMIC PARAMETERS RDS(ON) IDSS µA VDS=VGS, ID=-250µΑ VDS=0V, VGS= ±12V Zero Gate Voltage Drain Current Gate-Body leakage current Drain-Source Breakdown Voltage On state drain current IS=-1A,VGS=0V VDS=-5V, ID=-2A VGS=-2.5V, ID=-1.0A ID=-250µA, VGS=0V V =-10V, V =-10V, R =5 Ω, Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Diode Forward Voltage Forward Transconductance VGS=-4.5V, VDS=-5V VGS=-10V, ID=-2A VGS=-4.5V, ID=-1.3A tr 5.5 ns tD(off) 22 ns tf 8 ns trr 6.1 ns Qrr 1.4 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs Turn-On Rise Time Turn-Off DelayTime IF=-2A, dI/dt=100A/µs Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=-10V, VDS=-10V, RL=5Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 3: Nov 2011 www.aosmd.com Page 2 of 5 |
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