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AOT210L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOT210L
Description  30V N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOT210L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AOT210L/AOB210L
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
105A
RDS(ON) (at VGS=10V)
< 2.9m
Ω (< 2.6mΩ∗)
RDS(ON) (at VGS = 4.5V)
< 3.7m
Ω (< 3.5mΩ∗)
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
* Surface mount package TO263
400
Pulsed Drain Current
C
Continuous Drain
Current
G
Parameter
Typ
Max
TC=25°C
1.9
88
TC=100°C
Maximum Junction-to-Ambient
A
°C/W
RθJA
12
54
15
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
Units
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
The AOT210L/AOB210L uses Trench MOSFET
technology that is uniquely optimized to provide the most
efficient high frequency switching performance. Power
losses are minimized due to an extremely low combination
of RDS(ON) and Crss.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
16
Continuous Drain
Current
231
20
A
68
A
TA=25°C
IDSM
A
TA=70°C
ID
105
82
TC=25°C
TC=100°C
Power Dissipation
B
PD
W
Power Dissipation
A
PDSM
W
TA=70°C
176
1.2
TA=25°C
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
0.7
65
0.85
G
D
S
TO220
Top View
Bottom View
G
G
S
D
D
S
D
D
TO-263
D
2PAK
Top View
Bottom View
D
D
S
G
G
S
Rev0 : Sep 2010
www.aosmd.com
Page 1 of 6


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