MTEE2N20J3 datasheet(3/10 Pages) CYSTEKEC

Part #	MTEE2N20J3

Description	N-Channel Enhancement Mode Power MOSFET

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Manufacturer	CYSTEKEC [Cystech Electonics Corp.]

Direct Link	http://www.cystekec.com

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3 / 10 page

CYStech Electronics Corp.

Spec. No. : C881J3

Issued Date : 2012.12.14

Revised Date :

Page No. : 3/ 10

MTEE2N20J3

CYStek Product Specification

Characteristics (Tj=25

°C, unless otherwise specified)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

Static

BVDSS

200

-

V

VGS=0V, ID=250μA

∆BVDSS/∆Tj

-

0.2

-

V/

°C

Reference to 25

°C, ID=250μA

VGS(th)

2.5

3.5

4.5

V

VDS = VGS, ID=250μA

*GFS

-

1

-

S

VDS =40V, ID=1A

IGSS

-

±

100

nA

VGS=±30V

IDSS

-

10

VDS =200V, VGS =0V

IDSS

-

100

μA

VDS =160V, VGS =0V, Tj=125

°C

-

650

800

VGS =10V, ID=2.9A

*RDS(ON)

-

590

730

mΩ

VGS =7V, ID=1A

Dynamic

*Qg

-

6.5

-

*Qgs

-

1.3

-

*Qgd

-

3.3

-

nC

VDD=160V, ID=4A,VGS=10V

*td(ON)

-

9

-

*tr

-

16

-

*td(OFF)

-

15

-

*tf

-

13

-

ns

VDD=100V, ID=4A, VGS=10V, RG=25Ω

Ciss

-

232

-

Coss

-

25

-

Crss

-

9.1

-

pF

VGS=0V, VDS=25V, f=1MHz

Source-Drain Diode

*IS

-

2

*ISM

-

8

A

*VSD

-

0.77

1.2

V

IS=1A, VGS=0V

*trr

-

120

-

ns

*Qrr

-

500

-

nC

VGS=0, IF=2A, dI/dt=100A/μs

*Pulse Test : Pulse Width

≤300μs, Duty Cycle≤2%

Ordering Information

Device

Package

Shipping

MTEE2N20J3-0-T3-G

TO-252

(RoHS compliant and halogen-free package)

2500 pcs / tape& reel

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