MJE18008 MJF18008

5

Motorola Bipolar Power Transistor Device Data

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

hFE, FORCED GAIN

3

160

hFE, FORCED GAIN

Figure 13. Inductive Fall Time

Figure 14. Inductive Crossover Time

Figure 15. Forward Bias Safe Operating Area

Figure 16. Reverse Bias Switching Safe

Operating Area

Figure 17. Forward Bias Power Derating

60

5

15

400

200

50

100

10

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

9

6

0

0

200

1,0

0,8

0,2

0,0

20

TC, CASE TEMPERATURE (°C)

80

140

160

1

0.01

3

600

1000

4

100

1000

DC (MJE18008)

5 ms

0,6

0,4

6

7

8

9

10

11

12

13

14

70

80

140

3

5

15

4

6

7

8

9

10

11

12

13

14

300

100

IC = 2 A

IC = 4.5 A

TJ = 25°C

TJ = 125°C

10

0.1

EXTENDED

SOA

1 ms

10

µs 1 µs

400

2

1

4

5

40

60

100

120

SECOND BREAKDOWN

DERATING

DC (MJF18008)

100

120

350

7

8

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipation

than the curves indicate. The data of Figure 15 is based on TC

= 25

°C; TJ(pk) is variable depending on power level. Second

breakdown pulse limits are valid for duty cycles to 10% but

must be derated when TC > 25°C. Second breakdown

limitations do not derate the same as thermal limitations.

Allowable current at the voltages shown in Figure 15 may be

found at any case temperature by using the appropriate curve

on Figure 17. TJ(pk) may be calculated from the data in Figure

20 and 21. At any case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown. For inductive

loads, high voltage and current must be sustained simulta-

neously during turn–off with the base–to–emitter junction

reverse–biased. The safe level is specified as a reverse–

biased safe operating area (Figure 16). This rating is verified

under clamped conditions so that the device is never

subjected to an avalanche mode.

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

150

130

110

90

150

250

800

IB(off) = IC/2

VCC = 15 V

VZ = 300 V

LC = 200 µH

IC = 2 A

IC = 4.5 A

–1, 5 V

– 5 V

TC ≤ 125°C

IC/IB ≥ 4

LC = 500 µH

GUARANTEED SAFE OPERATING AREA INFORMATION

TYPICAL SWITCHING CHARACTERISTICS

(IB2 = IC/2 for all switching)

TJ = 25°C

TJ = 125°C

THERMAL DERATING

VBE(off) = 0 V