MRF6P21190HR6_10 datasheet(6/11 Pages) FREESCALE

Part #	MRF6P21190HR6

Description	RF Power Field Effect Transistor

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

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RF Device Data

Freescale Semiconductor

MRF6P21190HR6

TYPICAL CHARACTERISTICS

Figure 7. Intermodulation Distortion Products

versus Tone Spacing

10

--55

--15

0.1

7th Order

TWO--TONE SPACING (MHz)

VDD =28 Vdc,Pout = 190 W (PEP), IDQ = 1900 mA

Two--Tone Measurements

(f1 + f2)/2 = Center Frequency of 2140 MHz

5th Order

3rd Order

--20

--30

--40

--45

--50

1

100

--25

--35

Figure 8. Pulsed CW Output Power versus

Input Power

44

58

34

P3dB = 54.45 dBm (279 W)

Pin, INPUT POWER (dBm)

VDD =28 Vdc,IDQ = 1900 mA

Pulsed CW, 8 μsec(on), 1 msec(off)

f = 2140 MHz

56

54

52

47

36

38

40

42

Actual

Ideal

P1dB = 53.7 dBm (233 W)

57

48

32

50

Figure 9. 2--Carrier W--CDMA ACPR, IM3,

Power Gain and Drain Efficiency

versus Output Power

0--60

Pout, OUTPUT POWER (WATTS) AVG.

30

--30

25

20

--35

15

--40

5

--50

1

10

100

--45

10

--55

IM3

ηD

Gps

ACPR

300

0

18

0

60

Pout, OUTPUT POWER (WATTS) CW

Figure 10. Power Gain and Drain Efficiency

versus CW Output Power

VDD =28 Vdc

IDQ = 1900 mA

f = 2140 MHz

100

10

15

12

9

6

3

50

40

30

20

10

Gps

ηD

Figure 11. Power Gain versus Output Power

Pout, OUTPUT POWER (WATTS) CW

VDD =28 V

500

6

18

10

16

10

8

100

12

14

24 V

IDQ = 1900 mA

f = 2140 MHz

20 V

VDD =28 Vdc,IDQ = 1900 mA

f1 = 2135 MHz, f2 = 2145 MHz

2--Carrier W--CDMA, 10 MHz

Carrier Spacing, 3.84 MHz Channel Bandwidth

PAR = 8.5 dB @ 0.01% Probability (CCDF)

3

55

53

51

49

33

35

37

39

41

43

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MRF6P21190HR6 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

MRF6P21190HR6 Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc

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