2

RF Device Data

Freescale Semiconductor

MRF6P27160HR6

Table 3. ESD Protection Characteristics

Test Methodology

Class

Human Body Model (per JESD22-A114)

1C (Minimum)

Machine Model (per EIA/JESD22-A115)

A (Minimum)

Charge Device Model (per JESD22-C101)

III (Minimum)

Characteristic

Symbol

Min

Typ

Max

Unit

Zero Gate Voltage Drain Leakage Current

—

—

10

μAdc

Zero Gate Voltage Drain Leakage Current

—

—

1

μAdc

Gate-Source Leakage Current

—

—

1

μAdc

On Characteristics

1

2

3

Vdc

2

2.8

4

Vdc

—

0.21

0.3

Vdc

Reverse Transfer Capacitance

—

2.8

—

pF

Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset.

PAR = 9.8 dB @ 0.01% Probability on CCDF.

Power Gain

13

14.6

16

dB

Drain Efficiency

20

22.6

—

%

Adjacent Channel Power Ratio

ACPR

—

-47.8

-45

dBc

Input Return Loss

IRL

—

-13

-9

dB

1. Each side of device measured separately.

2. Part internally matched both on input and output.

3. Measurement made with device in push-pull configuration.