2743019447 datasheet(6/19 Pages) FREESCALE

Part #	2743019447

Description	RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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RF Device Data

Freescale Semiconductor

MRF6V2300NR1 MRF6V2300NBR1

TYPICAL CHARACTERISTICS

Figure 10. Power Gain versus Output Power

Pout, OUTPUT POWER (WATTS) CW

VDD =20 V

25 V

400

14

28

0

200

50

18

16

100

150

24

22

26

IDQ = 900 mA

f = 220 MHz

35 V

40 V

50 V

20

250

300

350

45 V

35

60

10

25_C

TC =--30_C

85_C

25

15

50

45

40

Pin, INPUT POWER (dBm)

Figure 11. Power Output versus Power Input

VDD =50 Vdc

IDQ = 900 mA

f = 220 MHz

20

30

55

22

29

5

10

80

10

28

26

24

70

60

50

40

30

20

Pout, OUTPUT POWER (WATTS) CW

Figure 12. Power Gain and Drain Efficiency

versus CW Output Power

ηD

27

25

23

100

600

25_C

TC =--30_C

85_C

--32

--28

--29

--30

--31

--33

240

160

IMD3

Gps

f, FREQUENCY (MHz)

Figure 13. VHF Broadcast Broadband Performance

230

220

210

200

190

180

170

25

24

15

65

55

45

40

30

20

22

20

18

16

15

23

21

19

17

60

50

35

25

ηD

VDD =50 V,Pout = 300 W (Peak)

IDQ = 1100 mA, Tone--Spacing = 100 kHz

Gps

VDD =50 Vdc

IDQ = 900 mA

f = 220 MHz

25_C

--30_C

30 V

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2743019447 Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

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