ATC100B120JT500XT datasheet(6/20 Pages) FREESCALE

Part #	ATC100B120JT500XT

Description	RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

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Manufacturer	FREESCALE [Freescale Semiconductor, Inc]

Direct Link	http://www.freescale.com

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RF Device Data

Freescale Semiconductor

MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5

TYPICAL CHARACTERISTICS — 860 MHz

IDS(Q) = 100 mA

Figure 4. Normalized VGS Quiescent versus

Case Temperature

3.3

0

10

2.1

2.3

2.2

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 5. Drain Current versus Gate--Source Voltage

2.4

9

4

VDD =50 Vdc

Note: Measured with both sides of the transistor tied together.

TC, CASE TEMPERATURE (°C)

1.06

1.05

1.04

1.02

1.01

1.03

1

0.99

0.98

0.97

0.96

0.95

0.94

100

--50

0

--25

25

50

75

1400 mA

1900 mA

2400 mA

VDD =50 Vdc

8

7

6

5

2

3

1

2.6

2.5

2.7

2.9

2.8

3

3.1 3.2

40 Vdc

30 Vdc

20 Vdc

10 Vdc

50

1

1000

020

10

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 6. Capacitance versus Drain--Source Voltage

30

100

10

40

Coss

Measured with ±30 mV(rms)ac @ 1 MHz

VGS =0 Vdc

Note: Each side of device measured separately.

Crss

50

64

32

62

Pin, INPUT POWER (dBm)

Figure 7. Pulsed CW Output Power versus

Input Power

60

43

58

36

37

38

39

40

41

42

P3dB = 59.0 dBm (794 W)

Actual

Ideal

P2dB = 58.8 dBm (759 W)

VDD =50 Vdc,IDQ = 1400 mA, f = 860 MHz

Pulse Width = 100 μsec, Duty Cycle = 10%

56

54

34

35

33

P1dB = 58.4 dBm (692 W)

52

Figure 8. Pulsed Power Gain and Drain Efficiency

versus Output Power

Pout, OUTPUT POWER (WATTS) PULSED

16

22

10

19

21

20

100

1000

ηD

Gps

18

17

VDD =50 Vdc,IDQ = 1400 mA

f = 860 MHz

Pulse Width = 100 μsec

Duty Cycle = 10%

0

60

50

20

40

30

10

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ATC100B120JT500XT Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc

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