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ATC100B120JT500XT Datasheet(PDF) 6 Page - Freescale Semiconductor, Inc |
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ATC100B120JT500XT Datasheet(HTML) 6 Page - Freescale Semiconductor, Inc |
6 / 20 page 6 RF Device Data Freescale Semiconductor MRFE6VP8600HR6 MRFE6VP8600HR5 MRFE6VP8600HSR6 MRFE6VP8600HSR5 TYPICAL CHARACTERISTICS — 860 MHz IDS(Q) = 100 mA Figure 4. Normalized VGS Quiescent versus Case Temperature 3.3 0 10 2.1 2.3 2.2 VGS, GATE--SOURCE VOLTAGE (VOLTS) Figure 5. Drain Current versus Gate--Source Voltage 2.4 9 4 VDD =50 Vdc Note: Measured with both sides of the transistor tied together. TC, CASE TEMPERATURE (°C) 1.06 1.05 1.04 1.02 1.01 1.03 1 0.99 0.98 0.97 0.96 0.95 0.94 100 --50 0 --25 25 50 75 1400 mA 1900 mA 2400 mA VDD =50 Vdc 8 7 6 5 2 3 1 2.6 2.5 2.7 2.9 2.8 3 3.1 3.2 40 Vdc 30 Vdc 20 Vdc 10 Vdc 50 1 1000 020 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) Figure 6. Capacitance versus Drain--Source Voltage 30 100 10 40 Coss Measured with ±30 mV(rms)ac @ 1 MHz VGS =0 Vdc Note: Each side of device measured separately. Crss 50 64 32 62 Pin, INPUT POWER (dBm) Figure 7. Pulsed CW Output Power versus Input Power 60 43 58 36 37 38 39 40 41 42 P3dB = 59.0 dBm (794 W) Actual Ideal P2dB = 58.8 dBm (759 W) VDD =50 Vdc,IDQ = 1400 mA, f = 860 MHz Pulse Width = 100 μsec, Duty Cycle = 10% 56 54 34 35 33 P1dB = 58.4 dBm (692 W) 52 Figure 8. Pulsed Power Gain and Drain Efficiency versus Output Power Pout, OUTPUT POWER (WATTS) PULSED 16 22 10 19 21 20 100 1000 ηD Gps 18 17 VDD =50 Vdc,IDQ = 1400 mA f = 860 MHz Pulse Width = 100 μsec Duty Cycle = 10% 0 60 50 20 40 30 10 |
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