MJE200 MJE210

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1)

(IC = 10 mAdc, IB = 0)

VCEO(sus)

25

—

Vdc

Collector Cutoff Current

(VCB = 40 Vdc, IE = 0)

(VCB = 40 Vdc, IE = 0, TJ = 125_C)

ICBO

—

—

100

100

nAdc

µAdc

Emitter Cutoff Current

(VBE = 8.0 Vdc, IC = 0)

IEBO

—

100

nAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 500 mAdc, VCE = 1.0 Vdc)

(IC = 2.0 Adc, VCE = 1.0 Vdc)

(IC = 5.0 Adc, VCE = 2.0 Vdc)

hFE

70

45

10

—

180

—

—

Collector–Emitter Saturation Voltage (1)

(IC = 500 mAdc, IB = 50 mAdc)

(IC = 2.0 Adc, IB = 200 mAdc)

(IC = 5.0 Adc, IB = 1.0 Adc)

VCE(sat)

—

—

—

0.3

0.75

1.8

Vdc

Base–Emitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 1.0 Adc)

VBE(sat)

—

2.5

Vdc

Base–Emitter On Voltage (1)

(IC = 2.0 Adc, VCE = 1.0 Vdc)

VBE(on)

—

1.6

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain — Bandwidth Product (2)

(IC = 100 mAdc, VCE = 10 Vdc, ftest = 10 MHz)

fT

65

—

MHz

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

MJE200

MJE210

Cob

—

—

80

120

pF

(1) Pulse Test: Pulse Width = 300

µs, Duty Cycle [ 2.0%.

(2) fT = hfe• ftest.

Figure 2. Switching Time Test Circuit

+11 V

25

µs

0

– 9.0 V

RB

– 4 V

D1

SCOPE

VCC

+ 30 V

RC

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

51

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

1K

IC, COLLECTOR CURRENT (AMPS)

VCC = 30 V

IC/IB = 10

TJ = 25°C

500

300

200

100

50

td

30

20

10

5

1

0.01

0.03 0.05

0.5

0.2

0.1

0.3

10

Figure 3. Turn–On Time

3

2

5

2

1

3

tr

MJE200

MJE210

0.02