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AOB466L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOB466L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AOT466L/AOB466L Symbol Min Typ Max Units BVDSS 60 V VDS=60V, VGS=0V 1 TJ=55°C 5 IGSS 100 nA VGS(th) Gate Threshold Voltage 3.6 4.3 5 V ID(ON) 540 A 3.2 3.9 TJ=125°C 5.2 6.3 2.9 3.6 m Ω gFS 60 S VSD 0.67 1 V IS 180 A Ciss 4485 5607 6730 pF Coss 750 1076 1400 pF Crss 280 485 680 pF Rg 0.35 0.75 1.2 Ω Qg(10V) 85 108 130 nC Qgs 24 30 36 nC Qgd 27 46 65 nC tD(on) 31 ns tr 29 ns tD(off) 41 ns tf 13 ns trr 20 35 50 ns Qrr 190 273 355 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=30V, RL=1.5Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=30V, ID=20A Gate Source Charge Gate Drain Charge m Ω TO220 IS=1A,VGS=0V VDS=5V, ID=20A Forward Transconductance Diode Forward Voltage VGS=10V, ID=20A TO263 RDS(ON) Static Drain-Source On-Resistance IDSS µA VDS=VGS ID=250µA VDS=0V, VGS= ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=500A/µs VGS=0V, VDS=30V, f=1MHz SWITCHING PARAMETERS A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C.Maximum UIS current limited by test equipment. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev0: Otc 2010 www.aosmd.com Page 2 of 6 |
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