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AOB482L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOB482L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 7 page  AOT482L/AOB482L Symbol Min Typ Max Units BVDSS 80 V VDS=80V, VGS=0V 10 TJ=55°C 50 IGSS 100 nA VGS(th) Gate Threshold Voltage 2.5 3.1 3.7 V ID(ON) 330 A 5.9 7.2 TJ=125°C 11 13 6.8 9 m Ω 5.6 6.9 m Ω 6.5 8.7 m Ω gFS 50 S VSD 0.64 1 V IS 105 A Ciss 3240 4054 4870 pF Coss 320 458 600 pF Crss 95 160 225 pF Rg 0.2 0.45 0.7 Ω Qg(10V) 53 66.8 81 nC Qgs 16 20.8 25 nC Qgd 12 20.2 30 nC tD(on) 26 ns tr 18 ns tD(off) 48 ns tf 21 ns trr 18 26 34 ns Qrr 75 108 140 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs Maximum Body-Diode Continuous Current G Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=40V, ID=20A Gate Source Charge Gate Drain Charge m Ω TO220 IS=1A,VGS=0V VDS=5V, ID=20A VGS=7V, ID=20A TO220 VGS=10V, ID=20A TO263 VGS=7V, ID=20A TO263 Forward Transconductance Diode Forward Voltage RDS(ON) Static Drain-Source On-Resistance IDSS µA VDS=VGS ID=250µA VDS=0V, VGS= ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=250µA, VGS=0V VGS=10V, VDS=5V VGS=10V, ID=20A Reverse Transfer Capacitance IF=20A, dI/dt=500A/µs VGS=0V, VDS=40V, f=1MHz SWITCHING PARAMETERS A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev 0: May 2010 www.aosmd.com Page 2 of 7 |
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