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AOT2618L Datasheet(PDF) 4 Page - Alpha & Omega Semiconductors |
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AOT2618L Datasheet(HTML) 4 Page - Alpha & Omega Semiconductors |
4 / 7 page AOT2618L/AOB2618L/AOTF2618L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 17 5 2 10 0 18 0 2 4 6 8 10 0 3 6 9 12 15 Q g (nC) Figure 7: Gate-Charge Characteristics 0 200 400 600 800 1000 1200 0 10 20 30 40 50 60 V DS (Volts) Figure 8: Capacitance Characteristics C iss 0 50 100 150 200 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case C oss C rss V DS=30V I D=20A T J(Max)=175°C T C=25°C 10 µs 0.0 0.1 1.0 10.0 100.0 1000.0 0.01 0.1 1 10 100 1000 V DS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area for AOT2618L and AOB2618L (Note F) 10 µs 10ms 1ms DC R DS(ON) T J(Max)=175°C T C=25°C 100 µs 40 for AOT2618L and AOB2618L (Note F) 0.01 0.1 1 10 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance for AOT2618L and AOB2618L (Note F) Single Pulse D=T on/T T J,PK=TC+PDM.Z θJC.RθJC T on T P D In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse Area for AOT2618L and AOB2618L (Note F) RθJC=3.6°C/W Rev 0 : July 2012 www.aosmd.com Page 4 of 7 |
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