AOC2414 datasheet(2/5 Pages) AOSMD

Part #	AOC2414

Description	8V N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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2 / 5 page

AOC2414

Symbol

Min

Typ

Max

Units

BVDSS

8

V

VDS=8V, VGS=0V

1

TJ=55°C

5

IGSS

±10

µA

VGS(th)

Gate Threshold Voltage

0.2

0.52

0.8

V

15.5

19

TJ=125°C

19.5

24

16.5

21

m

Ω

18

24

m

Ω

21

29

m

Ω

gFS

30

S

VSD

0.54

1

V

Ciss

2042

pF

Coss

600

pF

Crss

298

pF

Rg

2.4

K

Ω

Qg

21.5

32

nC

Qgs

10.5

nC

Qgd

4.5

nC

tD(on)

2.5

µs

tr

4

µs

tD(off)

5

µs

tf

8

µs

trr

20

ns

Qrr

10

nC

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING

OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,

FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Body Diode Reverse Recovery Time

Drain-Source Breakdown Voltage

ID=250µA, VGS=0V

VGS=2.5V, ID=1.5A

Reverse Transfer Capacitance

IF=1.5A, dI/dt=100A/µs

VGS=0V, VDS=4V, f=1MHz

SWITCHING PARAMETERS

VDS=VGS ID=250µA

VDS=0V, VGS=±5V

Electrical Characteristics (TJ=25°C unless otherwise noted)

STATIC PARAMETERS

Parameter

Conditions

IDSS

µA

Zero Gate Voltage Drain Current

Gate-Body leakage current

Forward Transconductance

Diode Forward Voltage

RDS(ON)

Static Drain-Source On-Resistance

m

Ω

IS=1A,VGS=0V

VDS=5V, ID=1.5A

VGS=1.2V, ID=1A

VGS=1.8V, ID=1A

VGS=0V, VDS=0V, f=1MHz

Turn-Off Fall Time

Total Gate Charge

VGS=4.5V, VDS=4V, ID=1.5A

Gate Source Charge

Gate Drain Charge

VGS=1.5V, ID=1A

Body Diode Reverse Recovery Charge IF=1.5A, dI/dt=100A/µs

Input Capacitance

Output Capacitance

Turn-On DelayTime

DYNAMIC PARAMETERS

Turn-On Rise Time

Turn-Off DelayTime

VGS=2.5V, VDS=4V, RL=2.67Ω,

RGEN=3Ω

Gate resistance

Rev 0: Nov. 2012

www.aosmd.com

Page 2 of 5

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