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AOC2802 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOC2802 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page AOC2802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Product Summary Vss 20V ID (at VGS=4.5V) 6A RSS(ON) (at VGS=4.5V) < 34m Ω RSS(ON) (at VGS=4.0V) < 35m Ω RSS(ON) (at VGS=3.1V) < 43m Ω RSS(ON) (at VGS=2.5V) < 54m Ω The AOC2802 uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni- directional or bi-directional load switch, facilitated by its common-drain configuration. WLCSP 1.57x1.57_4 Symbol VSS VGS TA=25°C I S ISM PD TJ, TSTG Note 1. Mounted on minimum pad PCB Note 2. PW <300 µs pulses, duty cycle 0.5% max -55 to 150 60 Power Dissipation Note1 TA=25°C °C Units Parameter 6 Absolute Maximum Ratings TA=25°C unless otherwise noted ±12 20 Maximum A V V W Source Current (Pulse) Note2 Gate-Source Voltage Source-Source Voltage Source Current (DC) Note1 Junction and Storage Temperature Range 1.3 Equivalent Circuit G2 G1 S1 Top View Bottom View Pin1(S1) S2 G1 G2 D1 S1 D2 S2 Rev 4: Nov 2012 www.aosmd.com Page 1 of 5 |
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