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AOU2N60 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOU2N60 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 6 page  AOD2N60/AOU2N60 Symbol Min Typ Max Units 600 700 BVDSS /∆TJ 0.56 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3 4 4.5 V RDS(ON) 3.6 4.4 Ω gFS 3.5 S VSD 0.79 1 V IS Maximum Body-Diode Continuous Current 2 A ISM 8 A Ciss 215 270 325 pF Coss 23 29 35 pF Crss 2.2 2.8 3.4 pF Rg 3.5 4.4 6.6 Ω Qg 9.5 11 nC Qgs 1.9 2 nC Qgd 4.7 6 nC tD(on) 17.2 21 ns tr 14.3 17 ns tD(off) 27 32 ns tf 17 20 ns trr 154 185 ns Qrr 0.8 0.96 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime Turn-On Rise Time Diode Forward Voltage Turn-Off DelayTime VGS=10V, VDS=300V, ID=2A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=480V, ID=2A Gate Source Charge Gate Drain Charge VDS=5V ID=250µA VDS=480V, TJ=125°C IS=1A,VGS=0V VDS=40V, ID=1A Forward Transconductance DYNAMIC PARAMETERS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=0V, VGS=±30V IDSS Zero Gate Voltage Drain Current VDS=600V, VGS=0V Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions BVDSS µA V Body Diode Reverse Recovery Time Static Drain-Source On-Resistance VGS=10V, ID=1A Reverse Transfer Capacitance IF=2A,dI/dt=100A/µs,VDS=100V VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. L=60mH, IAS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C Rev 5: Nov 2010 www.aosmd.com Page 2 of 6 |
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