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AOD3N50 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOD3N50
Description  500V, 3A N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOD3N50 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

  AOD3N50_11 Datasheet HTML 1Page - Alpha & Omega Semiconductors AOD3N50_11 Datasheet HTML 2Page - Alpha & Omega Semiconductors AOD3N50_11 Datasheet HTML 3Page - Alpha & Omega Semiconductors AOD3N50_11 Datasheet HTML 4Page - Alpha & Omega Semiconductors AOD3N50_11 Datasheet HTML 5Page - Alpha & Omega Semiconductors AOD3N50_11 Datasheet HTML 6Page - Alpha & Omega Semiconductors  
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background image
AOD3N50/AOU3N50
Symbol
Min
Typ
Max
Units
500
600
BVDSS
/∆TJ
0.54
V/
oC
1
10
IGSS
Gate-Body leakage current
±100
n
Α
VGS(th)
Gate Threshold Voltage
3.5
4.1
4.5
V
RDS(ON)
2.3
3
gFS
2.8
S
VSD
0.78
1
V
IS
Maximum Body-Diode Continuous Current
3
A
ISM
9
A
Ciss
221
276
331
pF
Coss
25
31.4
38
pF
Crss
2.1
2.6
4.1
pF
Rg
1.9
3.9
5.9
Qg
6.7
8.0
nC
Qgs
1.7
3.0
nC
Qgd
2.7
3.2
nC
tD(on)
11
13.2
ns
tr
19
23.0
ns
tD(off)
20.5
24.6
ns
Static Drain-Source On-Resistance
VGS=10V, ID=1.5A
Reverse Transfer Capacitance
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=3A,
RG=25Ω
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
BVDSS
µA
V
Zero Gate Voltage Drain Current
ID=250µA, VGS=0V
VDS=0V, VGS=±30V
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
IDSS
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
Gate Drain Charge
VDS=5V,ID=250µA
VDS=400V, TJ=125°C
IS=1A,VGS=0V
VDS=40V, ID=1.5A
Forward Transconductance
DYNAMIC PARAMETERS
Diode Forward Voltage
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Total Gate Charge
VGS=10V, VDS=400V, ID=3A
Gate Source Charge
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
tD(off)
20.5
24.6
ns
tf
15
18.0
ns
trr
134
161
ns
Qrr
0.89
1.1
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
IF=3A,dI/dt=100A/µs,VDS=100V
Turn-Off DelayTime
G
Turn-Off Fall Time
Body Diode Reverse Recovery Charge IF=3A,dI/dt=100A/µs,VDS=100V
Body Diode Reverse Recovery Time
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation P
D is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in
setting the upper dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)=150°C.
D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)=150°C.
G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
H. L=60mH, I
AS=2A, VDD=150V, RG=10Ω, Starting TJ=25°C
Rev 6: Aug 2011
www.aosmd.com
Page 2 of 6


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