MJE2955T MJE3055T

2

Motorola Bipolar Power Transistor Device Data

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Sustaining Voltage (1) (IC = 200 mAdc, IB = 0)

VCEO(sus)

60

—

Vdc

Collector Cutoff Current (VCE = 30 Vdc, IB = 0)

ICEO

—

700

µAdc

Collector Cutoff Current

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc)

(VCE = 70 Vdc, VEB(off) = 1.5 Vdc, TC = 150_C)

ICEX

—

—

1.0

5.0

mAdc

Collector Cutoff Current

(VCB = 70 Vdc, IE = 0)

(VCB = 70 Vdc, IE = 0, TC = 150_C)

ICBO

—

—

1.0

10

mAdc

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)

IEBO

—

5.0

mAdc

ON CHARACTERISTICS

DC Current Gain (1)

(IC = 4.0 Adc, VCE = 4 0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

hFE

20

5.0

100

—

—

Collector–Emitter Saturation Voltage (1)

(IC = 4.0 Adc, IB = 0.4 Adc)

(IC = 10 Adc, IB = 3.3 Adc)

VCE(sat)

—

—

1.1

8.0

Vdc

Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)

VBE(on)

—

1.8

Vdc

DYNAMIC CHARACTERISTICS

Current–Gain–Bandwidth Product (IC = 500 mAdc, VCE = 10 Vdc, f = 500 kHz)

fT

2.0

—

MHz

(1) Pulse Test: Pulse Width

v 300 µs, Duty Cycle v 20%.

0

TC, CASE TEMPERATURE (°C)

75

100

175

25

50

Figure 2. DC Current Gain

125

150

500

0.01

Figure 3. Power Derating

IC, COLLECTOR CURRENT (AMP)

5.0

0.02

0.05

0.1

0.2

1.0

2.0

10

0.5

300

200

100

50

30

90

0

80

60

40

70

50

20

10

5.0

TJ = 150°C

25

°C

– 55

°C

VCE = 2.0 V

30

10

20

MJE3055T

MJE2955T

0.1

IC, COLLECTOR CURRENT (AMP)

0.5

1.0

10

0.2 0.3

2.0 3.0

Figure 4. “On” Voltages

2.0

0

1.6

1.2

0.8

0.4

5.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 10

MJE2955T

0.1

IC, COLLECTOR CURRENT (AMP)

0.5

1.0

10

0.2 0.3

2.0

3.0

1.4

0

1.2

1.0

0.8

0.4

5.0

TJ = 25°C

VBE(sat) @ IC/IB = 10

VBE @ VCE = 2.0 V

VCE(sat) @ IC/IB = 10

MJE3055T

0.6

0.2