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AOD504 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOD504
Description  25V N-Channel AlphaMOS
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOD504 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AOD504
25V N-Channel AlphaMOS
General Description
Product Summary
VDS
ID (at VGS=10V)
46A
RDS(ON) (at VGS=10V)
< 5m
Ω
RDS(ON) (at VGS = 4.5V)
< 10m
Ω
Application
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
25V
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Maximum
Units
• Latest Trench Power MOSFET technology
• Very Low RDS(on) at 4.5VGS
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
• DC/DC Converters in Computing
• Isolated DC/DC Converters in Telecom and Industrial
Drain-Source Voltage
25
V
Gate-Source Voltage
±20
V
G
D
S
TO252
DPAK
TopView
Bottom View
G
G
D
D
S
S
D
VGS
IDM
IAS
EAS
VDS Spike
VSPIKE
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
100ns
33
V
Gate-Source Voltage
±20
V
Continuous Drain
Current
G
TC=25°C
ID
46
A
TC=100°C
36
Pulsed Drain Current
C
170
Continuous Drain
Current
TA=25°C
IDSM
18
A
TA=70°C
14
Avalanche Current
C
29
A
Avalanche energy L=0.1mH
C
42
mJ
Power Dissipation
B
TC=25°C
PD
50
W
TC=100°C
25
Power Dissipation
A
TA=25°C
PDSM
2.5
W
TA=70°C
1.6
Junction and Storage Temperature Range
-55 to 175
°C
Thermal Characteristics
Parameter
Typ
Max
Units
Maximum Junction-to-Case
2.5
3
°C/W
Maximum Junction-to-Ambient
A
RθJA
16
20
°C/W
Maximum Junction-to-Ambient
A D
41
50
°C/W
Rev 0: July 2012
www.aosmd.com
Page 1 of 6


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