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AOI4185 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOI4185 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOD4185/AOI4185 Symbol Min Typ Max Units BVDSS -40 V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) -1.7 -1.9 -3 V ID(ON) -115 A 12.5 15 TJ=125°C 19 23 16 20 gFS 50 S VSD -0.72 -1 V IS -20 A Ciss 2550 pF Coss 280 pF Crss 190 pF Rg 2.5 4 6 Ω Qg (-10V) 42 55 nC Qg (-4.5V) 18.6 Qgs 7 nC Qgd 8.6 nC tD(on) 9.4 ns RDS(ON) Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage VDS=0V, VGS= ±20V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage VDS=VGS ID=-250µA On state drain current VGS=-10V, VDS=-5V VGS=-10V, ID=-20A Reverse Transfer Capacitance Output Capacitance DYNAMIC PARAMETERS IDSS µ A Drain-Source Breakdown Voltage ID=-250µA, VGS=0V VDS=-40V, VGS=0V Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions m Ω Gate Drain Charge VGS=0V, VDS=-20V, f=1MHz SWITCHING PARAMETERS Total Gate Charge VGS=-4.5V, ID=-15A IS=-1A,VGS=0V VDS=-5V, ID=-20A Turn-On DelayTime Maximum Body-Diode Continuous Current Input Capacitance Gate Source Charge Gate resistance VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-20V, ID=-20A Total Gate Charge Alpha & Omega Semiconductor, Ltd. www.aosmd.com tD(on) 9.4 ns tr 20 ns tD(off) 55 ns tf 30 ns trr 38 49 ns Qrr 47 nC COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time IF=-20A, dI/dt=100A/µs Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-20V, RL=1Ω, RGEN=3Ω Turn-Off Fall Time Turn-On DelayTime TBD TBD Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs A: The value of R θJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are based on T J(MAX)=150°C, using steady state junction-to-ambient thermal resistance. B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. H. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev4: April, 2012 Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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