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AOI4185 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOI4185
Description  P-Channel Enhancement Mode Field Effect Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOI4185 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

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AOD4185/AOI4185
Symbol
Min
Typ
Max
Units
BVDSS
-40
V
-1
TJ=55°C
-5
IGSS
±100
nA
VGS(th)
-1.7
-1.9
-3
V
ID(ON)
-115
A
12.5
15
TJ=125°C
19
23
16
20
gFS
50
S
VSD
-0.72
-1
V
IS
-20
A
Ciss
2550
pF
Coss
280
pF
Crss
190
pF
Rg
2.5
4
6
Qg (-10V)
42
55
nC
Qg (-4.5V)
18.6
Qgs
7
nC
Qgd
8.6
nC
tD(on)
9.4
ns
RDS(ON)
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage
VDS=0V, VGS= ±20V
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
VDS=VGS ID=-250µA
On state drain current
VGS=-10V, VDS=-5V
VGS=-10V, ID=-20A
Reverse Transfer Capacitance
Output Capacitance
DYNAMIC PARAMETERS
IDSS
µ
A
Drain-Source Breakdown Voltage
ID=-250µA, VGS=0V
VDS=-40V, VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
m
Gate Drain Charge
VGS=0V, VDS=-20V, f=1MHz
SWITCHING PARAMETERS
Total Gate Charge
VGS=-4.5V, ID=-15A
IS=-1A,VGS=0V
VDS=-5V, ID=-20A
Turn-On DelayTime
Maximum Body-Diode Continuous Current
Input Capacitance
Gate Source Charge
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-20V,
ID=-20A
Total Gate Charge
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
tD(on)
9.4
ns
tr
20
ns
tD(off)
55
ns
tf
30
ns
trr
38
49
ns
Qrr
47
nC
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
Turn-On Rise Time
Turn-Off DelayTime
VGS=-10V, VDS=-20V, RL=1Ω,
RGEN=3Ω
Turn-Off Fall Time
Turn-On DelayTime
TBD
TBD
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
A: The value of R
θJA is measured with the device in a still air environment with T A =25°C. The power dissipation PDSM and current rating IDSM are
based on T
J(MAX)=150°C, using steady state junction-to-ambient thermal resistance.
B. The power dissipation P
D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature T
J(MAX)=175°C.
D. The R
θJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)=175°C. The SOA curve provides a single pulse rating.
G. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T
A=25°C.
H. The maximum current rating is limited by bond-wires.
*This device is guaranteed green after data code 8X11 (Sep 1ST 2008).
Rev4: April, 2012
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com


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