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DCR820N50 Datasheet(PDF) 4 Page - Dynex Semiconductor

Part # DCR820N50
Description  Phase Control Thyristor
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

DCR820N50 Datasheet(HTML) 4 Page - Dynex Semiconductor

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SEMICONDUCTOR
DCR820N65
4/11
www.dynexsemi.com
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
250
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
15
mA
CURVES
0
500
1000
1500
2000
2500
3000
3500
1.0
2.0
3.0
4.0
5.0
Instantaneous on-state voltage, VT - (V)
min 25°C
25°C max
125°C min
125°C max
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
Where
A = 0.739446
B = 0.018199
VTM = A + Bln (IT) + C.IT+D. IT
C = 0.000769
D = 0.017564
these values are valid for Tj = 125°C for IT 300A to 3000A


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