M12L64164A-5TG2Y datasheet(4/45 Pages) ESMT

Part #	M12L64164A-5TG2Y

Description	1M x 16 Bit x 4 Banks

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Manufacturer	ESMT [Elite Semiconductor Memory Technology Inc.]

Direct Link	http://www.esmt.com.tw/index.asp

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4 / 45 page

ESMT

M12L64164A (2Y)

Elite Semiconductor Memory Technology Inc.

Publication Date: May 2012

Revision: 1.1

4/45

DC CHARACTERISTICS

Recommended operating condition unless otherwise noted

VERSION

PARAMETER

SYMBOL

TEST CONDITION

-5

-6

-7

UNIT

NOTE

Operating Current

(One Bank Active)

ICC1

Burst Length = 1, tRC ≥ tRC(min), IOL = 0 mA,

tCC = tCC (min)

60

50

40

mA

1,2

ICC2P

CKE

≤ VIL(max), tCC = tCC (min)

2

Precharge Standby Current

in power-down mode

ICC2PS

CKE & CLK

≤ VIL(max), tCC = ∞

1

mA

ICC2N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC = tCC (min)

Input signals are changed one time during 2CLK

20

Precharge Standby Current

in non power-down mode

ICC2NS

CKE

≥ VIH(min), CLK

≤ VIL(max), tCC = ∞

input signals are stable

10

mA

ICC3P

CKE

≤ VIL(max), tCC = tCC (min)

8

Active Standby Current

in power-down mode

ICC3PS

CKE & CLK

≤ VIL(max), tCC = ∞

8

mA

ICC3N

CKE

≥ VIH(min), CS ≥ VIH(min), tCC=15ns

Input signals are changed one time during 2clks

All other pins

≥ VDD-0.2V or ≤ 0.2V

30

mA

Active Standby Current

in non power-down mode

(One Bank Active)

ICC3NS

CKE

≥ VIH(min), CLK

≤ VIL(max), tCC = ∞

input signals are stable

25

mA

Operating Current

(Burst Mode)

ICC4

IOL = 0 mA, Page Burst, All Bank active

Burst Length = 4, CAS Latency = 3

80

70

60

mA

1,2

Refresh Current

ICC5

tRFC

≥ tRFC(min), tCC = tCC(min)

65

55

45

mA

Self Refresh Current

ICC6

CKE

≤ 0.2V

1

mA

Note:

1. Measured with outputs open.

2. Input signals are changed one time during 2 CLKS.

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