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M12L64164A-5TG2Y Datasheet(PDF) 4 Page - Elite Semiconductor Memory Technology Inc. |
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M12L64164A-5TG2Y Datasheet(HTML) 4 Page - Elite Semiconductor Memory Technology Inc. |
4 / 45 page ESMT M12L64164A (2Y) Elite Semiconductor Memory Technology Inc. Publication Date: May 2012 Revision: 1.1 4/45 DC CHARACTERISTICS Recommended operating condition unless otherwise noted VERSION PARAMETER SYMBOL TEST CONDITION -5 -6 -7 UNIT NOTE Operating Current (One Bank Active) ICC1 Burst Length = 1, tRC ≥ tRC(min), IOL = 0 mA, tCC = tCC (min) 60 50 40 mA 1,2 ICC2P CKE ≤ VIL(max), tCC = tCC (min) 2 Precharge Standby Current in power-down mode ICC2PS CKE & CLK ≤ VIL(max), tCC = ∞ 1 mA ICC2N CKE ≥ VIH(min), CS ≥ VIH(min), tCC = tCC (min) Input signals are changed one time during 2CLK 20 Precharge Standby Current in non power-down mode ICC2NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ input signals are stable 10 mA ICC3P CKE ≤ VIL(max), tCC = tCC (min) 8 Active Standby Current in power-down mode ICC3PS CKE & CLK ≤ VIL(max), tCC = ∞ 8 mA ICC3N CKE ≥ VIH(min), CS ≥ VIH(min), tCC=15ns Input signals are changed one time during 2clks All other pins ≥ VDD-0.2V or ≤ 0.2V 30 mA Active Standby Current in non power-down mode (One Bank Active) ICC3NS CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ input signals are stable 25 mA Operating Current (Burst Mode) ICC4 IOL = 0 mA, Page Burst, All Bank active Burst Length = 4, CAS Latency = 3 80 70 60 mA 1,2 Refresh Current ICC5 tRFC ≥ tRFC(min), tCC = tCC(min) 65 55 45 mA Self Refresh Current ICC6 CKE ≤ 0.2V 1 mA Note: 1. Measured with outputs open. 2. Input signals are changed one time during 2 CLKS. |
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