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AOK29S50 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOK29S50 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOK29S50 500V 29A αααα MOS TM Power Transistor General Description Product Summary VDS @ Tj,max 600V IDM 120A RDS(ON),max 0.15 Ω Qg,typ 26.6nC Eoss @ 400V 6.3 µJ 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK29S50L Symbol VDS VGS IDM IAR EAR EAS MOSFET dv/dt ruggedness Peak diode recovery dv/dt H TJ, TSTG TL Symbol RθJA RθCS RθJC Single pulsed avalanche energy G W 110 PD Repetitive avalanche energy C mJ mJ TC=25°C dv/dt 2.9 TC=25°C ID Avalanche Current C 29 18 Derate above 25 oC Power Dissipation B A 7.5 ±30 Gate-Source Voltage V A 120 TC=100°C Pulsed Drain Current C Continuous Drain Current °C/W The AOK29S50 has been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted Drain-Source Voltage 500 Units V/ns °C/W W/ oC °C Thermal Characteristics °C/W Maximum Junction-to-Case °C Junction and Storage Temperature Range Maximum Case-to-sink A Maximum Junction-to-Ambient A,D 300 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Parameter 0.35 AOK29S50 AOK29S50 40 0.5 608 -55 to 150 100 20 357 G D S G D S Top View TO-247 AOK29S50 Rev 0: March 2012 www.aosmd.com Page 1 of 6 |
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