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AON1620 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON1620 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page AON1620 12V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=4.5V) 4A RDS(ON) (at VGS =4.5V) < 22m Ω RDS(ON) (at VGS =2.5V) < 27m Ω RDS(ON) (at VGS =1.8V) < 36m Ω Typical ESD protection HBM Class 2 Symbol VDS The AON1620 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. V Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 12V Drain-Source Voltage 12 Pin 1 Pin 1 D G S S DFN 1.6x1.6A Top View Bottom View G D S VDS VGS IDM TJ, TSTG Symbol t ≤ 10s Steady-State TA=70°C 1.15 1.8 Junction and Storage Temperature Range 16 Pulsed Drain Current C -55 to 150 Power Dissipation A PD TA=70°C ±8 Gate-Source Voltage A Continuous Drain Current G ID W V Drain-Source Voltage 12 TA=25°C V 4 3 TA=25°C °C/W Maximum Junction-to-Ambient A D 110 °C Thermal Characteristics Units Maximum Junction-to-Ambient A °C/W RθJA 56 88 70 Parameter Typ Max Rev 0 : Sep. 2012 www.aosmd.com Page 1 of 5 |
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Similar Description - AON1620 |
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