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AON2400 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AON2400 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 5 page AON2400 8V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=4.5V) 8A RDS(ON) (at VGS = 2.5V) < 11m Ω RDS(ON) (at VGS = 1.8V) < 13m Ω RDS(ON) (at VGS = 1.5V) < 16m Ω RDS(ON) (at VGS = 1.2V) < 23m Ω Symbol VDS Parameter The AON2400 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. V Maximum Units 8V Drain-Source Voltage 8 Absolute Maximum Ratings TA=25°C unless otherwise noted G D S DFN 2x2B Top View Bottom View Pin 1 D D G D D S D S Pin 1 VDS VGS IDM TJ, TSTG Symbol t ≤ 10s Steady-State W TA=25°C TA=70°C 1.8 2.8 TA=100°C ±5 Power Dissipation A 32 Pulsed Drain Current C PD 6 °C Thermal Characteristics Typ Max -55 to 150 Units Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient A °C/W RθJA 37 66 °C/W Maximum Junction-to-Ambient A D 80 45 V A Continuous Drain Current G ID TA=25°C 8 Gate-Source Voltage Drain-Source Voltage 8 V Rev 0 : April. 2012 www.aosmd.com Page 1 of 5 |
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