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AON4803 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON4803 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AON4803 Symbol Min Typ Max Units BVDSS -20 V VDS=-20V, VGS=0V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -0.4 -0.65 -1 V ID(ON) -15 A 65 90 TJ=125°C 90 125 80 120 m Ω 100 165 m Ω gFS 12 S VSD -0.7 -1 V IS -2 A Ciss 560 745 pF Coss 80 pF Crss 70 pF Rg 15 23 Ω Qg 6.1 8 nC Qgs 0.6 nC Qgd 1.6 nC tD(on) 10 ns t 12 ns Reverse Transfer Capacitance VGS=0V, VDS=-10V, f=1MHz SWITCHING PARAMETERS Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-10V, VDS=-5V VGS=-4.5V, ID=-3.4A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V VDS=-5V, ID=-3.4A VGS=-1.8V, ID=-1.5A VGS=-2.5V, ID=-2.5A RDS(ON) Static Drain-Source On-Resistance IDSS µA VDS=VGS ID=-250µA VDS=0V, VGS=±8V Zero Gate Voltage Drain Current Gate-Body leakage current m Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Total Gate Charge VGS=-4.5V, VDS=-10V, ID=-3.4A Gate Source Charge Gate Drain Charge Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time V =-4.5V, V =-10V, R =2.9 Ω, tr 12 ns tD(off) 44 ns tf 22 ns trr 21 ns Qrr 7.5 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. IF=-3.4A, dI/dt=100A/µs Body Diode Reverse Recovery Time Turn-Off Fall Time Body Diode Reverse Recovery Charge IF=-3.4A, dI/dt=100A/µs Turn-On Rise Time Turn-Off DelayTime VGS=-4.5V, VDS=-10V, RL=2.9Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation P D is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialT J=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. Rev 2: July 2012 www.aosmd.com Page 2 of 5 |
Similar Part No. - AON4803_12 |
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