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AON6246 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON6246
Description  60V N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON6246 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON6246
60V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
80A
RDS(ON) (at VGS=10V)
< 6.4m
RDS(ON) (at VGS = 4.5V)
< 8m
100% UIS Tested
100% Rg Tested
Symbol
V
The AON6246 uses trench MOSFET technology that is
uniquely optimized to provide the most efficient high
frequency switching performance.Power losses are
minimized due to an extremely low combination of RDS(ON)
and Crss.In addition,switching behavior is well controlled
with a soft recovery body diode.This device is ideal for
boost converters and synchronous rectifiers for
consumer, telecom, industrial power supplies and LED
backlighting.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
60V
Drain-Source Voltage
60
G
D
S
Top View
1
2
3
4
8
7
6
5
PIN1
DFN5X6
Top View
Bottom View
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
1.1
55
1.5
Power Dissipation
B
PD
W
Power Dissipation
A
PDSM
W
TA=70°C
83
1.4
TA=25°C
A
TA=25°C
IDSM
A
TA=70°C
ID
80
51
TC=25°C
TC=100°C
Avalanche energy L=0.1mH
C
mJ
Avalanche Current
C
10
Continuous Drain
Current
125
13
A
50
V
V
±20
Gate-Source Voltage
Drain-Source Voltage
60
Units
Junction and Storage Temperature Range
-55 to 150
°C
Thermal Characteristics
Maximum Junction-to-Ambient
A
°C/W
RθJA
14
40
17
170
Pulsed Drain Current
C
Continuous Drain
Current
Parameter
Typ
Max
TC=25°C
2.3
33
TC=100°C
Rev 0: July 2011
www.aosmd.com
Page 1 of 6


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