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ADG429BN Datasheet(PDF) 2 Page - Analog Devices |
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ADG429BN Datasheet(HTML) 2 Page - Analog Devices |
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2 / 12 page  REV. C –2– ADG428/ADG429–SPECIFICATIONS DUAL SUPPLY1 B Version T Version –40 C to –55 C to Parameter +25 C +85 C +25 C +125 C Units Test Conditions/Comments ANALOG SWITCH Analog Signal Range VSS to VDD VSS to VDD V RON 60 60 Ω typ VD = ±10 V, I S = –1 mA 100 125 100 125 Ω max ∆R ON 10 10 % max –10 V < VS < 10 V, IS = –1 mA LEAKAGE CURRENTS Source OFF Leakage IS (OFF) ±0.03 ±0.3 ±0.03 ±0.3 nA typ VD = ±10 V, V S = 10 V; ±0.5 ±50 ±0.5 ±50 nA max Test Circuit 2 Drain OFF Leakage ID (OFF) VD = ±10 V, V S = 10 V; ADG428 ±0.07 ±0.7 ±0.07 ±0.7 nA typ Test Circuit 3 ±1 ±100 ±1 ±100 nA max ADG429 ±0.05 ±0.5 ±0.05 ±0.5 nA typ ±1 ±50 ±1 ±50 nA max Channel ON Leakage ID, IS (ON) VS = VD = ±10 V; ADG428 ±1 ±100 ±1 ±100 nA max Test Circuit 4 ADG429 ±1 ±50 ±1 ±50 nA max DIGITAL INPUTS Input High Voltage, VINH 2.4 2.4 V min Input Low Voltage, VINL 0.8 0.8 V max Input Current IINL or IINH ±0.1 ±1 ±0.1 ±1 µA max V IN = 0 or VDD CIN, Digital Input Capacitance 8 8 pF typ f = 1 MHz DYNAMIC CHARACTERISTICS2 tTRANSITION 110 110 ns typ RL = 1 M Ω, C L = 35 pF; 250 300 250 300 ns max VS1 = ±10 V, V S8 = 10 V; Test Circuit 5 tOPEN 10 10 ns min RL = 1 k Ω, C L = 35 pF; VS = +5 V; Test Circuit 6 tON (EN, WR) 115 115 ns typ RL = 1 k Ω, C L = 35 pF; 150 225 150 225 ns max VS = +5 V; Test Circuit 7 tOFF (EN, RS) 105 105 ns typ RL = 1 k Ω, C L = 35 pF; 150 300 150 300 ns max VS = +5 V; Test Circuit 7 tW, Write Pulsewidth 100 100 ns min tS, Address, Enable Setup Time 100 100 ns min tH, Address, Enable Hold Time 10 10 ns min tRS, Reset Pulsewidth 100 100 ns min VS = +5 V Charge Injection 4 4 pC typ VS = 0 V, RS = 0 Ω, C L = 10 nF; Test Circuit 10 OFF Isolation –75 –75 dB typ RL = 1 k Ω, C L = 15 pF, f = 100 kHz; –60 –60 dB min VS = 7 V rms, VEN = 0 V; Test Circuit 11 Channel-to-Channel Crosstalk 85 85 dB typ RL = 1 k Ω, C L = 15 pF, f = 100 kHz; Test Circuit 12 CS (OFF) 11 11 pF typ f = 1 MHz CD (OFF) f = 1 MHz ADG428 40 40 pF typ ADG429 20 20 pF typ CD, CS (ON) f = 1 MHz ADG428 54 54 pF typ ADG429 34 34 pF typ POWER REQUIREMENTS VIN = 0 V, VEN = 0 V IDD 20 20 µA typ 100 100 µA max ISS 0.001 0.001 µA typ 55 µA max NOTES 1Temperature ranges are as follows: B Version: –40 °C to +85°C; T Version: –55°C to +125°C. 2Guaranteed by design, not subject to production test. Specifications subject to change without notice. (VDD = +15 V, VSS = –15 V, GND = 0 V, WR = 0 V, RS = 2.4 V unless otherwise noted) |
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