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AON7403 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AON7403 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 5 page AON7403 Symbol Min Typ Max Units BVDSS -30 V VDS=-30V, VGS=0V -1 TJ=55°C -5 IGSS 100 nA VGS(th) Gate Threshold Voltage -1.7 -2.2 -3 V ID(ON) -80 A 14 18 TJ=125°C 20 25 26 36 m Ω gFS 20 S VSD -0.7 -1 V IS -22 A Ciss 1130 1400 pF Coss 240 pF Crss 155 pF Rg 5.8 8 Ω Qg(10V) 18 24 nC Qgs 5.5 nC Qgd 3.3 nC tD(on) 8.7 ns tr 8.5 ns tD(off) 18 ns tf 7 ns trr 12 16 ns Qrr 26 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Drain-Source Breakdown Voltage On state drain current ID=-250µA, VGS=0V VGS=-10V, VDS=-5V VGS=-10V, ID=-8A Reverse Transfer Capacitance IF=-8A, dI/dt=500A/µs VGS=0V, VDS=-15V, f=1MHz SWITCHING PARAMETERS IDSS µA VDS=0V, VGS= ±25V Zero Gate Voltage Drain Current Gate-Body leakage current Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Forward Transconductance IS=-1A,VGS=0V VDS=-5V, ID=-8A VGS=-5V, ID=-5A Diode Forward Voltage VDS=VGS ID=-250µA RDS(ON) Static Drain-Source On-Resistance m Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=-10V, VDS=-15V, ID=-8A Gate Source Charge Gate Drain Charge Body Diode Reverse Recovery Charge IF=-8A, dI/dt=500A/µs Maximum Body-Diode Continuous Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R qJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RqJA is the sum of the thermal impedence from junction to case RqJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating . G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. Rev 3: Jul. 2011 www.aosmd.com Page 2 of 5 |
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Similar Description - AON7403_11 |
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