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AON7406 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AON7406
Description  30V N-Channel MOSFET
Download  6 Pages
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AON7406 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AON7406
30V N-Channel MOSFET
General Description
Product Summary
VDS
ID (at VGS=10V)
25A
RDS(ON) (at VGS=10V)
< 17m
RDS(ON) (at VGS=4.5V)
< 23m
Typical ESD protection
HBM Class 2
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAS, IAR
EAS, EAR
TJ, TSTG
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJC
Maximum Junction-to-Case
°C/W
°C/W
Maximum Junction-to-Ambient
A D
6.2
75
7.5
W
Power Dissipation
A
PDSM
W
TA=70°C
16.7
2
TA=25°C
15
TC=25°C
TC=100°C
Power Dissipation
B
PD
Continuous Drain
Current
18
9
Avalanche energy L=0.1mH
C
A
TA=25°C
IDSM
A
TA=70°C
50
Pulsed Drain Current
C
Continuous Drain
Current
ID
25
The AON7406 uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for use in SMPS and general
purpose applications.
V
Maximum
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
30V
mJ
Avalanche Current
C
7
A
19
V
±20
Gate-Source Voltage
Drain-Source Voltage
30
°C
Thermal Characteristics
Units
Maximum Junction-to-Ambient
A
°C/W
RθJA
30
60
40
Parameter
Typ
Max
TC=25°C
3.1
6.7
TC=100°C
Junction and Storage Temperature Range
-55 to 150
Top View
G
D
S
DFN 3x3A
Top View
Bottom View
Pin 1
Pin 1
G
S
S
S
D
D
D
D
Rev 5: Dec. 2010
www.aosmd.com
Page 1 of 6


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