PSMN3R9-60PS datasheet(6/13 Pages) NXP

Part #	PSMN3R9-60PS

Description	N-channel 60 V, 3.9 m廓 standard level MOSFET in SOT78

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NXP Semiconductors

PSMN3R9-60PS

N-channel 60 V, 3.9 mΩ standard level MOSFET in SOT78

PSMN3R9-60PS

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Product data sheet

1 February 2013

6 / 13

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

QGD

gate-drain charge

-

33

-

nC

Ciss

input capacitance

-

5600

-

pF

Coss

output capacitance

-

740

-

pF

Crss

reverse transfer

capacitance

VGS = 0 V; VDS = 25 V; f = 1 MHz;

Tj = 25 °C; Fig. 15

-

460

-

pF

td(on)

turn-on delay time

-

25.3

-

ns

tr

rise time

-

41.4

-

ns

td(off)

turn-off delay time

-

62.7

-

ns

tf

fall time

VDS = 45 V; RL = 1.8 Ω; VGS = 10 V;

RG(ext) = 5 Ω

-

45

-

ns

Source-drain diode

VSD

source-drain voltage

IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 16

-

0.8

1.2

V

trr

reverse recovery time

-

39

-

ns

Qr

recovered charge

IS = 20 A; dIS/dt = -100 A/µs; VGS = 0 V;

VDS = 25 V

-

51

-

nC

003aah394

0

120

240

360

0

1

2

3

4

VDS(V)

ID

(A)

VGS(V) = 4.5

5

6

8

10

5.5

Tj = 25 °C; tp = 300 μs

Fig. 6. Output characteristics; drain current as a

function of drain-source voltage; typical values

003aah395

0

5

10

15

0

5

10

15

20

VGS(V)

RDSon

(mΩ)

Fig. 7. Drain-source on-state resistance as a function

of gate-source voltage; typical values

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PSMN3R9-60PS Datasheet(PDF) 6 Page - NXP Semiconductors

PSMN3R9-60PS Datasheet(HTML) 6 Page - NXP Semiconductors

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