AOT4N60_12 datasheet(3/6 Pages) AOSMD

Part #	AOT4N60

Description	600V,4A N-Channel MOSFET

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Manufacturer	AOSMD [Alpha & Omega Semiconductors]

Direct Link	http://www.aosmd.com

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3 / 6 page

AOT4N60/AOTF4N60

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

0

2

4

6

8

0

5

10

15

20

25

30

V

DS (Volts)

Fig 1: On-Region Characteristics

V

GS=5.5V

6V

10V

6.5V

0.1

1

10

100

2

4

6

8

10

V

GS(Volts)

Figure 2: Transfer Characteristics

-55°C

V

DS=40V

25°C

125°C

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

1

2

3

4

5

6

7

8

9

I

D (A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

V

GS=10V

0

0.5

1

1.5

2

2.5

3

-100

-50

0

50

100

150

200

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

V

GS=10V

I

D=2A

40

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0

0.2

0.4

0.6

0.8

1.0

V

SD (Volts)

Figure 6: Body-Diode Characteristics (Note E)

25°C

125°C

0

2

4

6

8

0

5

10

15

20

25

30

V

DS (Volts)

Fig 1: On-Region Characteristics

V

GS=5.5V

6V

10V

6.5V

0.1

1

10

100

2

4

6

8

10

V

GS(Volts)

Figure 2: Transfer Characteristics

-55°C

V

DS=40V

25°C

125°C

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

1

2

3

4

5

6

7

8

9

I

D (A)

Figure 3: On-Resistance vs. Drain Current and Gate

Voltage

V

GS=10V

0

0.5

1

1.5

2

2.5

3

-100

-50

0

50

100

150

200

Temperature (°C)

Figure 4: On-Resistance vs. Junction Temperature

V

GS=10V

I

D=2A

0.8

0.9

1

1.1

1.2

-100

-50

0

50

100

150

200

T

J (°C)

Figure 5:Break Down vs. Junction Temparature

Rev8: Feb 2012

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Page 3 of 6

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