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AOT9N40 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOT9N40 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 5 page  AOT9N40 Symbol Min Typ Max Units 400 500 BVDSS /∆TJ 0.4 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.4 4 4.5 V RDS(ON) 0.64 0.8 Ω gFS 8S VSD 0.75 1 V IS Maximum Body-Diode Continuous Current 8 A ISM 22 A Ciss 500 630 760 pF Coss 45 73 100 pF Crss 2 5.7 9 pF Rg 1.2 2.6 4.0 Ω Qg 10 13.1 16 nC Qgs 3.9 nC Qgd 4.8 nC tD(on) 17 ns tr 52 ns tD(off) 25 ns tf 30 ns trr 150 195 240 ns Qrr 1.5 1.9 2.3 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Body Diode Reverse Recovery Time Static Drain-Source On-Resistance VGS=10V, ID=4A Reverse Transfer Capacitance IF=8A,dI/dt=100A/µs,VDS=100V VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS IS=1A,VGS=0V VDS=40V, ID=4A Forward Transconductance Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions IDSS Zero Gate Voltage Drain Current VDS=400V, VGS=0V Diode Forward Voltage VDS=5V ID=250µA VDS=320V, TJ=125°C Turn-Off DelayTime VGS=10V, VDS=200V, ID=8A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=320V, ID=8A Gate Source Charge Gate Drain Charge BVDSS Body Diode Reverse Recovery Charge IF=8A,dI/dt=100A/µs,VDS=100V Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time µA VDS=0V, VGS=±30V V Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Zero Gate Voltage Drain Current ID=250µA, VGS=0V A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedance from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal imped ance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C Rev 0: Dec 2010 www.aosmd.com Page 2 of 5 |
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