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AOTF9N50 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors

Part # AOTF9N50
Description  500V, 9A N-Channel MOSFET
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOTF9N50 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors

  AOTF9N50 Datasheet HTML 1Page - Alpha & Omega Semiconductors AOTF9N50 Datasheet HTML 2Page - Alpha & Omega Semiconductors AOTF9N50 Datasheet HTML 3Page - Alpha & Omega Semiconductors AOTF9N50 Datasheet HTML 4Page - Alpha & Omega Semiconductors AOTF9N50 Datasheet HTML 5Page - Alpha & Omega Semiconductors AOTF9N50 Datasheet HTML 6Page - Alpha & Omega Semiconductors  
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background image
AOT9N50/AOTF9N50
Symbol
Min
Typ
Max
Units
500
600
BVDSS
/∆TJ
0.56
V/
oC
1
10
IGSS
Gate-Body leakage current
±100
n
Α
VGS(th)
Gate Threshold Voltage
3.4
4
4.5
V
RDS(ON)
0.66
0.85
gFS
10
S
VSD
0.74
1
V
IS
Maximum Body-Diode Continuous Current
9
A
ISM
30
A
Ciss
694
868
1042
pF
Coss
74
93
112
pF
Crss
6.2
7.8
9.4
pF
Rg
2
4
6
Qg
15
23.6
28
nC
Qgs
4
5.2
6.2
nC
Qgd
8.5
10.6
12.7
nC
tD(on)
19.5
ns
tr
47
ns
tD(off)
51.5
ns
tf
38.5
ns
trr
195
248
300
ns
Qrr
2.5
3.5
4.5
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
µA
VDS=0V, VGS=±30V
V
Drain-Source Breakdown Voltage
ID=250µA, VGS=0V, TJ=25°C
ID=250µA, VGS=0V, TJ=150°C
BVDSS
Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Diode Forward Voltage
Turn-Off DelayTime
VGS=10V, VDS=250V, ID=9A,
RG=25Ω
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
VGS=10V, VDS=400V, ID=9A
Gate Source Charge
Gate Drain Charge
VDS=5V ID=250µA
VDS=400V, TJ=125°C
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
VDS=500V, VGS=0V
ID=250µA, VGS=0V
Electrical Characteristics (TJ=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter
Conditions
Body Diode Reverse Recovery Time
Static Drain-Source On-Resistance
VGS=10V, ID=4.5A
Reverse Transfer Capacitance
IF=9A,dI/dt=100A/µs,VDS=100V
VGS=0V, VDS=25V, f=1MHz
SWITCHING PARAMETERS
IS=1A,VGS=0V
VDS=40V, ID=4.5A
Forward Transconductance
A. The value of R θJA is measured with the device in a still air environment with T A =25°C.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ
=25°C.
D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300
µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C
Rev3: July 2010
www.aosmd.com
Page 2 of 6


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