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AOTF9N50 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOTF9N50 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
2 / 6 page AOT9N50/AOTF9N50 Symbol Min Typ Max Units 500 600 BVDSS /∆TJ 0.56 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3.4 4 4.5 V RDS(ON) 0.66 0.85 Ω gFS 10 S VSD 0.74 1 V IS Maximum Body-Diode Continuous Current 9 A ISM 30 A Ciss 694 868 1042 pF Coss 74 93 112 pF Crss 6.2 7.8 9.4 pF Rg 2 4 6 Ω Qg 15 23.6 28 nC Qgs 4 5.2 6.2 nC Qgd 8.5 10.6 12.7 nC tD(on) 19.5 ns tr 47 ns tD(off) 51.5 ns tf 38.5 ns trr 195 248 300 ns Qrr 2.5 3.5 4.5 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. µA VDS=0V, VGS=±30V V Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS Body Diode Reverse Recovery Charge IF=9A,dI/dt=100A/µs,VDS=100V Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Diode Forward Voltage Turn-Off DelayTime VGS=10V, VDS=250V, ID=9A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=400V, ID=9A Gate Source Charge Gate Drain Charge VDS=5V ID=250µA VDS=400V, TJ=125°C Zero Gate Voltage Drain Current IDSS Zero Gate Voltage Drain Current VDS=500V, VGS=0V ID=250µA, VGS=0V Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Static Drain-Source On-Resistance VGS=10V, ID=4.5A Reverse Transfer Capacitance IF=9A,dI/dt=100A/µs,VDS=100V VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS IS=1A,VGS=0V VDS=40V, ID=4.5A Forward Transconductance A. The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. G. L=60mH, IAS=3.2A, VDD=150V, RG=25Ω, Starting TJ=25°C Rev3: July 2010 www.aosmd.com Page 2 of 6 |
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