 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
AOTF10N65 Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
|
||||||||||||||||||||||||||||||
AOTF10N65 Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
|
|
2 / 6 page  AOT10N65/AOTF10N65 Symbol Min Typ Max Units 650 750 BVDSS /∆TJ 0.75 V/ oC 1 10 IGSS Gate-Body leakage current ±100 n Α VGS(th) Gate Threshold Voltage 3 4 4.5 V RDS(ON) 0.77 1 Ω gFS 13 S VSD 0.73 1 V IS Maximum Body-Diode Continuous Current 10 A ISM 36 A Ciss 1095 1369 1645 pF Coss 95 118 145 pF Crss 8 10 12 pF Rg 1.7 3.5 5.5 Ω Qg 22 27.7 33 nC Qgs 6 7.4 9 nC Qgd 9 11.3 14 nC tD(on) 30 ns tr 61 ns tD(off) 74 ns tf 53 ns trr 255 320 385 ns Qrr 4.8 6 7.2 µC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. µA VDS=0V, VGS=±30V V Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C Zero Gate Voltage Drain Current ID=250µA, VGS=0V BVDSS Body Diode Reverse Recovery Charge IF=10A,dI/dt=100A/µs,VDS=100V Maximum Body-Diode Pulsed Current Input Capacitance Output Capacitance Turn-On DelayTime DYNAMIC PARAMETERS Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=325V, ID=10A, RG=25Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Total Gate Charge VGS=10V, VDS=520V, ID=10A Gate Source Charge Gate Drain Charge IDSS Zero Gate Voltage Drain Current VDS=650V, VGS=0V Diode Forward Voltage VDS=5V, ID=250µA VDS=520V, TJ=125°C Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Body Diode Reverse Recovery Time Static Drain-Source On-Resistance VGS=10V, ID=5A Reverse Transfer Capacitance IF=10A,dI/dt=100A/µs,VDS=100V VGS=0V, VDS=25V, f=1MHz SWITCHING PARAMETERS IS=1A,VGS=0V VDS=40V, ID=5A Forward Transconductance A. The value of R θJA is measured with the device in a still air environment with TA =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150°C, Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The R θJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. L=60mH, IAS=3.4A, VDD=150V, RG=25Ω, Starting TJ=25°C Rev3: March 2011 www.aosmd.com Page 2 of 6 |
Similar Part No. - AOTF10N65 |
|
Similar Description - AOTF10N65 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.NET |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
