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AOT298L Datasheet(PDF) 2 Page - Alpha & Omega Semiconductors |
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AOT298L Datasheet(HTML) 2 Page - Alpha & Omega Semiconductors |
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2 / 7 page  AOT298L/AOB298L/AOTF298L Symbol Min Typ Max Units BVDSS 100 V VDS=100V, VGS=0V 1 TJ=55°C 5 IGSS ±100 nA VGS(th) Gate Threshold Voltage 2.7 3.3 4.1 V ID(ON) 130 A 12 14.5 TJ=125°C 19 24 gFS 30 S VSD 0.7 1 V IS 70 A Ciss 1250 1670 pF Coss 727 970 pF Crss 25 43 pF Rg 2 3 Ω Qg(10V) 19 27 nC Qgs 5.5 nC Qgd 6 nC tD(on) 7.5 ns tr 14 ns tD(off) 15 ns tf 14 ns Gate-Body leakage current VDS=VGS，ID=250µA VDS=0V, VGS=±20V Electrical Characteristics (TJ=25°C unless otherwise noted) STATIC PARAMETERS Parameter Conditions Drain-Source Breakdown Voltage ID=250µA, VGS=0V IDSS µA Zero Gate Voltage Drain Current m Ω On state drain current VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Continuous Current G Input Capacitance Forward Transconductance IS=1A,VGS=0V VDS=5V, ID=20A Turn-On Rise Time Turn-Off DelayTime VGS=10V, VDS=50V, RL=2.5Ω, RGEN=3Ω Gate resistance VGS=0V, VDS=0V, f=1MHz Turn-Off Fall Time Turn-On DelayTime VGS=10V, VDS=50V, ID=20A Total Gate Charge Gate Source Charge Gate Drain Charge Reverse Transfer Capacitance VGS=0V, VDS=50V, f=1MHz Output Capacitance SWITCHING PARAMETERS DYNAMIC PARAMETERS tf 14 ns trr 39 ns Qrr 140 nC THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Turn-Off Fall Time IF=20A, dI/dt=500A/µs Body Diode Reverse Recovery Charge Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation P DSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial T J =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current limited by package. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. Rev0 : Oct. 2011 www.aosmd.com Page 2 of 7 |
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