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AOT500L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT500L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 7 page  Symbol VDS VGS IDG IGS IDM IAR EAR TJ, TSTG Symbol Typ Max RθJA 60 75 RθJC 0.7 1.3 A +50 Continuous Drain Gate Current Continuouse Gate Source Current mA ID 80 57 +50 Maximum Junction-to-Case B Steady-State °C/W Thermal Characteristics Parameter Units Maximum Junction-to-Ambient A Steady-State °C/W clamped Gate-Source Voltage Drain-Source Voltage clamped Continuous Drain Current G Maximum Units Parameter TC=25°C TC=100°C Absolute Maximum Ratings TA=25°C unless otherwise noted V V Repetitive avalanche energy H 125 Pulsed Drain Current C Junction and Storage Temperature Range PD TC=100°C Avalanche Current L=100uH H Power Dissipation B TC=25°C 115 58 -55 to 175 250 50 A mJ A °C W AOT500L N-Channel Enhancement Mode Field Effect Transistor Features VDS (V) = Clamped ID = 80A (VGS = 10V) RDS(ON) < 5.3 mΩ (VGS = 10V) 100% UIS tested 100% Rg tested General Description AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode characteristics, making this device ideal for motor and inductive load control applications. Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications) G 10 Ω S D TO220 Top View Bottom View G G S D D S D D Alpha & Omega Semiconductor, Ltd. www.aosmd.com |
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Similar Description - AOT500L |
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