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AOT2610L Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOT2610L Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOT2610L 60V N-Channel MOSFET General Description Product Summary VDS ID (at VGS=10V) 55A RDS(ON) (at VGS=10V) < 10.7m Ω RDS(ON) (at VGS =4.5V) < 13.5m Ω 100% UIS Tested 100% Rg Tested Symbol The AOT2610L uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. Maximum Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted 60V G D S TO220 Top View Bottom View G G S D D S D Symbol VDS VGS IDM IAS EAS TJ, TSTG Symbol t ≤ 10s Steady-State Steady-State RθJC Maximum Junction-to-Ambient A °C/W RθJA 12 48 15 V ±20 Gate-Source Voltage Drain-Source Voltage 60 Units Junction and Storage Temperature Range -55 to 175 °C Thermal Characteristics Parameter Typ Max V Maximum Units Parameter mJ Avalanche Current C 7 Continuous Drain Current 65 9 A 36 Avalanche energy L=0.1mH C A TA=25°C IDSM A TA=70°C ID 55 39 TC=25°C TC=100°C 140 Pulsed Drain Current C Continuous Drain Current W Power Dissipation A PDSM W TA=70°C 75 1.3 TA=25°C TC=25°C 2.1 37.5 TC=100°C Power Dissipation B PD Maximum Junction-to-Case °C/W °C/W Maximum Junction-to-Ambient A D 1.65 60 2.0 Rev 0: Nov. 2012 www.aosmd.com Page 1 of 6 |
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