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ADM209ARS Datasheet(PDF) 2 Page - Analog Devices

Part No. ADM209ARS
Description  0.1 uF, 5 V Powered CMOS RS-232 Drivers/Receivers
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Maker  AD [Analog Devices]
Homepage  http://www.analog.com
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ADM205–ADM211/ADM213–SPECIFICATIONS
Parameter
Min
Typ
Max
Units
Test Conditions/Comments
Output Voltage Swing
±5
±9
Volts
All Transmitter Outputs Loaded with 3 k
Ω to
Ground
VCC Power Supply Current
3
7
mA
No Load, ADM206, ADM211, ADM213
5
9
mA
No Load, ADM205, ADM207, ADM208
0.4
1
mA
No Load, ADM209
V+ Power Supply Current
3.5
5
mA
No Load, V+ = 12 V ADM209 Only
Shutdown Supply Current
1
5
µA
Input Logic Threshold Low, VINL
0.8
V
TIN, EN, SD, EN, SD
Input Logic Threshold High, VINH
2.0
V
TIN, EN, SD, EN, SD
Logic Pull-Up Current
10
25
µAT
IN = 0 V
RS-232 Input Voltage Range
–30
+30
V
RS-232 Input Threshold Low
0.8
1.2
V
RS-232 Input Threshold High
1.7
2.4
V
RS-232 Input Hysteresis
0.2
0.5
1.0
V
RS-232 Input Resistance
357k
TTL/CMOS Output Voltage Low, VOL
0.4
V
IOUT = 1.6 mA
TTL/CMOS Output Voltage High, VOH
3.5
V
IOUT = –1.0 mA
TTL/CMOS Output Leakage Current
0.05
±5
µA
EN
= VCC, EN = 0 V, 0 V ≤ ROUT ≤ VCC
Output Enable Time (TEN)
115
ns
ADM205, ADM206, ADM209, ADM211
(Figure 25. CL = 150 pF)
Output Disable Time (TDIS)
165
ns
ADM205, ADM206, ADM209, ADM211
(Figure 25. RL = 1 k
Ω)
Propagation Delay
0.5
5
µs
RS-232 to TTL
Instantaneous Slew Rate
l
25
30
V/
µsC
L = 10 pF, RL = 3-7 kΩ, TA = +25°C
Transition Region Slew Rate
3
6
V/
µsR
L = 3 k
Ω, C
L = 2500 pF
Measured from +3 V to –3 V or –3 V to +3 V
Output Resistance
300
VCC = V+ = V– = 0 V, VOUT = ± 2 V
RS-232 Output Short Circuit Current
±12
±60
mA
NOTE
1Sample tested to ensure compliance.
Specifications subject to change without notice.
(VCC = +5 V
10% (206, 207, 208, 2O9,
211, 213); VCC = +5 V
5% (ADM205);
V+ = +9 V to +13.2 V (ADM209); C1–C4 = 0.1
F Ceramic. All Specifications TMIN to TMAX unless otherwise noted.)
REV. 0
–2–
ABSOLUTE MAXIMUM RATINGS*
(TA = +25°C unless otherwise noted)
VCC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to +6 V
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . (VCC – 0.3 V) to +14 V
V– . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +0.3 V to –14 V
Input Voltages
TIN
. . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
RIN
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
±30 V
Output Voltages
TOUT . . . . . . . . . . . . . . . . . . . (V+, + 0.3 V) to (V–, –0.3 V)
ROUT . . . . . . . . . . . . . . . . . . . . . . . . –0.3 V to (VCC + 0.3 V)
Short Circuit Duration
TOUT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Continuous
Power Dissipation
N-24 DIP (Derate 13.5 mW/
°C above +70°C) . . .1000 mW
N-24A DIP (Derate 13.5 mW/
°C above +70°C) . . 500 mW
R-24 SOIC (Derate 12 mW/
°C above +70°C) . . . . .850 mW
R-28 SOIC (Derate 12.5 mW/
°C above +70°C) . . 900 mW
RS-28 SSOP (Derate 10 mW/
°C above +70°C) . . . .900 mW
Q-24 Cerdip (Derate 12.5 mW/
°C above +70°C) .1000 mW
D-24 Ceramic (Derate 20 mW/
°C above +70°C) . .1000 mW
Thermal Impedance,
θ
JA
N-24 DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
°C/W
N-24A DIP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110
°C/W
R-24 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
°C/W
R-28 SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
°C/W
RS-28 SSOP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
°C/W
Q-14 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
°C/W
Q-16 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
°C/W
Q-20 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
°C/W
Q-24 Cerdip . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55
°C/W
D-24 Ceramic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
°C/W
Operating Temperature Range
Industrial (A Version) . . . . . . . . . . . . . . . . . -40
°C to +85°C
Storage Temperature Range . . . . . . . . . . . . . –65
°C to +150°C
Lead Temperature, Soldering . . . . . . . . . . . . . . . . . . . +300
°C
Vapour Phase (60 sec) . . . . . . . . . . . . . . . . . . . . . . . +215
°C
Infrared (15 sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . +220
°C
ESD Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . > 2000 V
*This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operation sections of this specifica-
tion is not implied. Exposure to absolute maximum rating conditions for extended
periods of time may affect reliability.




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