Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

Preview PDF HTML

AOW4S60 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOW4S60
Description  600V 4A a MOS TM Power Transistor
Download  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOW4S60 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

  AOW4S60 Datasheet HTML 1Page - Alpha & Omega Semiconductors AOW4S60 Datasheet HTML 2Page - Alpha & Omega Semiconductors AOW4S60 Datasheet HTML 3Page - Alpha & Omega Semiconductors AOW4S60 Datasheet HTML 4Page - Alpha & Omega Semiconductors AOW4S60 Datasheet HTML 5Page - Alpha & Omega Semiconductors AOW4S60 Datasheet HTML 6Page - Alpha & Omega Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 1 / 6 page
background image
AOW4S60/AOWF4S60
600V 4A
αααα MOS TM Power Transistor
General Description
Product Summary
VDS @ Tj,max
700V
IDM
16A
RDS(ON),max
0.9
Ω
Qg,typ
6nC
Eoss @ 400V
1.5
µJ
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAR
EAR
EAS
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
* Drain current limited by maximum junction temperature.
Single pulsed avalanche energy
G
W
38
PD
Repetitive avalanche energy
C
25
83
mJ
mJ
Avalanche Current
C
3.7*
3.7
Junction and Storage Temperature Range
TC=25°C
dv/dt
0.67
20
Power Dissipation
B
77
Gate-Source Voltage
V
A
16
TC=100°C
Pulsed Drain Current
C
Continuous Drain
Current
TC=25°C
ID
600
4*
4
A
1.6
±30
°C
The AOW4S60 & AOWF4S60 have been fabricated
using the advanced
αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOW4S60
AOWF4S60
Drain-Source Voltage
°C/W
W/
oC
°C
Thermal Characteristics
0.5
--
°C/W
Maximum Junction-to-Case
1.5
5
°C/W
Derate above 25
oC
Parameter
AOW4S60
0.2
-55 to 150
AOWF4S60
100
Units
V/ns
Maximum Case-to-sink
A
Maximum Junction-to-Ambient
A,D
300
65
65
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
G
D
S
Top View
TO-262F
Bottom View
Top View
TO-262
Bottom View
G
D
S
G
D
S
G
D
S
G
D
S
AOW4S60
AOWF4S60
Rev 1: Jan 2012
www.aosmd.com
Page 1 of 6


Similar Part No. - AOW4S60

ManufacturerPart #DatasheetDescription
logo
Inchange Semiconductor ...		 AOW4S60 ISC-AOW4S60 Datasheet
344Kb / 2P		    isc N-Channel MOSFET Transistor
More results

Similar Description - AOW4S60

ManufacturerPart #DatasheetDescription
logo
Alpha & Omega Semicondu...		 AOB4S60L AOSMD-AOB4S60L Datasheet
301Kb / 6P		    600V 4A a MOS TM Power Transistor
AOB4S60 AOSMD-AOB4S60 Datasheet
301Kb / 6P		    600V 4A a MOS Power Transistor
AOD4S60 AOSMD-AOD4S60 Datasheet
457Kb / 7P		    600V 4A a MOS Power Transistor
More results


Html Pages

1 2 3 4 5 6


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com