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AOW4S60 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOW4S60 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 6 page AOW4S60/AOWF4S60 600V 4A αααα MOS TM Power Transistor General Description Product Summary VDS @ Tj,max 700V IDM 16A RDS(ON),max 0.9 Ω Qg,typ 6nC Eoss @ 400V 1.5 µJ 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAR EAR EAS MOSFET dv/dt ruggedness Peak diode recovery dv/dt H TJ, TSTG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature. Single pulsed avalanche energy G W 38 PD Repetitive avalanche energy C 25 83 mJ mJ Avalanche Current C 3.7* 3.7 Junction and Storage Temperature Range TC=25°C dv/dt 0.67 20 Power Dissipation B 77 Gate-Source Voltage V A 16 TC=100°C Pulsed Drain Current C Continuous Drain Current TC=25°C ID 600 4* 4 A 1.6 ±30 °C The AOW4S60 & AOWF4S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted AOW4S60 AOWF4S60 Drain-Source Voltage °C/W W/ oC °C Thermal Characteristics 0.5 -- °C/W Maximum Junction-to-Case 1.5 5 °C/W Derate above 25 oC Parameter AOW4S60 0.2 -55 to 150 AOWF4S60 100 Units V/ns Maximum Case-to-sink A Maximum Junction-to-Ambient A,D 300 65 65 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J G D S Top View TO-262F Bottom View Top View TO-262 Bottom View G D S G D S G D S G D S AOW4S60 AOWF4S60 Rev 1: Jan 2012 www.aosmd.com Page 1 of 6 |
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