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AOWF7S65 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOWF7S65 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
1 / 6 page AOW7S65/AOWF7S65 650V 7A αααα MOS TM Power Transistor General Description Product Summary VDS @ Tj,max 750V IDM 30A RDS(ON),max 0.65 Ω Qg,typ 9.2nC Eoss @ 400V 2 µJ 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAR EAR EAS MOSFET dv/dt ruggedness Peak diode recovery dv/dt H TJ, TSTG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature. Units V/ns Maximum Case-to-sink A Maximum Junction-to-Ambient A,D 300 65 65 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J °C °C/W °C/W W/ oC °C Thermal Characteristics 0.5 -- °C/W Maximum Junction-to-Case 1.2 5 Parameter AOW7S65 0.2 Junction and Storage Temperature Range -55 to 150 AOWF7S65 100 Power Dissipation B The AOW7S65 & AOWF7S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted AOW7S65 AOWF7S65 Drain-Source Voltage 650 Gate-Source Voltage V ID 7* 7 TC=25°C ±30 A 1.7 A Avalanche Current C 5* 5 30 TC=100°C Pulsed Drain Current C Continuous Drain Current Single pulsed avalanche energy G W TC=25°C dv/dt 0.8 20 Derate above 25 oC mJ mJ 43 PD Repetitive avalanche energy C 25 104 86 G D S Top View TO-262F Bottom View Top View TO-262 Bottom View G D S G D S G D S G D S AOW7S65 AOWF7S65 Rev0: Dec 2011 www.aosmd.com Page 1 of 6 |
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