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AOWF7S65 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors

Part # AOWF7S65
Description  650V 7A a MOS TM Power Transistor
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Manufacturer  AOSMD [Alpha & Omega Semiconductors]
Direct Link  http://www.aosmd.com
Logo AOSMD - Alpha & Omega Semiconductors

AOWF7S65 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors

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AOW7S65/AOWF7S65
650V 7A
αααα MOS TM Power Transistor
General Description
Product Summary
VDS @ Tj,max
750V
IDM
30A
RDS(ON),max
0.65
Qg,typ
9.2nC
Eoss @ 400V
2
µJ
100% UIS Tested
100% Rg Tested
Symbol
VDS
VGS
IDM
IAR
EAR
EAS
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt
H
TJ, TSTG
TL
Symbol
RθJA
RθCS
RθJC
* Drain current limited by maximum junction temperature.
Units
V/ns
Maximum Case-to-sink
A
Maximum Junction-to-Ambient
A,D
300
65
65
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
J
°C
°C/W
°C/W
W/
oC
°C
Thermal Characteristics
0.5
--
°C/W
Maximum Junction-to-Case
1.2
5
Parameter
AOW7S65
0.2
Junction and Storage Temperature Range
-55 to 150
AOWF7S65
100
Power Dissipation
B
The AOW7S65 & AOWF7S65 have been fabricated
using the advanced
αMOSTM high voltage process that is
designed to deliver high levels of performance and
robustness in switching applications.
By providing low RDS(on), Qg and EOSS along with
guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply
designs.
V
Units
Parameter
Absolute Maximum Ratings TA=25°C unless otherwise noted
AOW7S65
AOWF7S65
Drain-Source Voltage
650
Gate-Source Voltage
V
ID
7*
7
TC=25°C
±30
A
1.7
A
Avalanche Current
C
5*
5
30
TC=100°C
Pulsed Drain Current
C
Continuous Drain
Current
Single pulsed avalanche energy
G
W
TC=25°C
dv/dt
0.8
20
Derate above 25
oC
mJ
mJ
43
PD
Repetitive avalanche energy
C
25
104
86
G
D
S
Top View
TO-262F
Bottom View
Top View
TO-262
Bottom View
G
D
S
G
D
S
G
D
S
G
D
S
AOW7S65
AOWF7S65
Rev0: Dec 2011
www.aosmd.com
Page 1 of 6


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