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AOWF20S60 Datasheet(PDF) 1 Page - Alpha & Omega Semiconductors |
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AOWF20S60 Datasheet(HTML) 1 Page - Alpha & Omega Semiconductors |
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1 / 6 page  AOW20S60/AOWF20S60 600V 20A αααα MOS TM Power Transistor General Description Product Summary VDS @ Tj,max 700V IDM 80A RDS(ON),max 0.199 Ω Qg,typ 20nC Eoss @ 400V 4.9 µJ 100% UIS Tested 100% Rg Tested Symbol VDS VGS IDM IAR EAR EAS MOSFET dv/dt ruggedness Peak diode recovery dv/dt H TJ, TSTG TL Symbol RθJA RθCS RθJC * Drain current limited by maximum junction temperature. Single pulsed avalanche energy G W 23 PD Repetitive avalanche energy C 28.0 266 mJ mJ Avalanche Current C 14* 14 Junction and Storage Temperature Range TC=25°C dv/dt 2.1 20 Power Dissipation B 188 Gate-Source Voltage V A 80 TC=100°C Pulsed Drain Current C Continuous Drain Current TC=25°C ID 600 20* 20 A 3.4 ±30 °C The AOW20S60 & AOWF20S60 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs. V Units Parameter Absolute Maximum Ratings TA=25°C unless otherwise noted AOW20S60 AOWF20S60 Drain-Source Voltage °C/W W/ oC °C Thermal Characteristics 0.5 -- °C/W Maximum Junction-to-Case 0.47 4.5 °C/W Derate above 25 oC Parameter AOW20S60 0.22 -55 to 150 AOWF20S60 100 Units V/ns Maximum Case-to-sink A Maximum Junction-to-Ambient A,D 300 65 65 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J G D S Top View TO-262 Bottom View G D S G D S Top View TO-262F Bottom View G D S G D S AOWF20S60 AOW20S60 Rev 4: Jan 2012 www.aosmd.com Page 1 of 6 |
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