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DCR960G12 Datasheet(PDF) 2 Page - Dynex Semiconductor |
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DCR960G12 Datasheet(HTML) 2 Page - Dynex Semiconductor |
2 / 9 page SEMICONDUCTOR DCR960G18 2/9 www.dynexsemi.com CURRENT RATINGS Tcase = 60°C unless stated otherwise Symbol Parameter Test Conditions Max. Units Double Side Cooled IT(AV) Mean on-state current Half wave resistive load 960 A IT(RMS) RMS value - 1510 A IT Continuous (direct) on-state current - 1360 A SURGE RATINGS Symbol Parameter Test Conditions Max. Units ITSM Surge (non-repetitive) on-state current 10ms half sine, Tcase = 125°C 14.0 kA I 2t I 2t for fusing VR = 0 0.98 MA 2s THERMAL AND MECHANICAL RATINGS Symbol Parameter Test Conditions Min. Max. Units Rth(j-c) Thermal resistance – junction to case Double side cooled DC - 0.035 °C/W Rth(c-h) Thermal resistance – case to heatsink Double side cooled DC - 0.008 °C/W Tvj Virtual junction temperature Blocking VDRM / VRRM - 125 °C Tstg Storage temperature range -40 140 °C Fm Clamping force 12 18 kN |
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