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DCR2150C40 Datasheet(PDF) 7 Page - Dynex Semiconductor |
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DCR2150C40 Datasheet(HTML) 7 Page - Dynex Semiconductor |
7 / 10 page SEMICONDUCTOR DCR2150C42 7/10 www.dynexsemi.com 10 100 1 10 100 Number of cycles Conditions: Tcase = 125°C V R =0 Pulse w idth = 10ms 0 10 20 30 40 50 60 70 80 90 100 1 10 100 Pulse width, tP - (ms) 0 2 4 6 8 10 12 14 16 18 20 I 2t ITSM Conditions: Tcase= 125°C VR = 0 half-sine wave Fig.10 Multi-cycle surge current Fig.11 Single-cycle surge current 0 2000 4000 6000 8000 10000 12000 14000 0 10 20 30 Rate of decay of on-state current, di/dt - (A/us) QS (max) = 2524.7*(di/dt) 0.5257 QS (min)= 1046.8*(di/dt) 0.659 Conditions: Tj=125 oC, V Rpeak ~ 2500V VRM ~1700V snubber as appropriate to control reverse voltages 0 50 100 150 200 250 300 350 400 450 500 0 10 20 30 Rate of decay of forward current, di/dt - (A/us) IRRmax = 42.033*(di/dt) 0.7538 IRRmin = 26.684*(di/dt) 0.827 Conditions: Tj=125 oC, V Rpeak ~ 2500V VRM ~1700V snubber as appropriate to control reverse voltages Fig.12 Reverse recovery charge Fig.13 Reverse recovery current |
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