ITC117P

www.ixysic.com

3

R06

Parameter

Conditions

Symbol

Min

Typ

Max

Units

Output Characteristics

Phototransistor Blocking Voltage

I

20

50

-

V

Phototransistor Dark Current

V

I

CEO

-

50

500

nA

Saturation Voltage

I

V

SAT

-

0.3

0.5

V

Current Transfer Ratio

I

CTR

33

400

-

%

Input Characteristics

Input Control Current

I

I

F

-2

6

mA

Input Voltage Drop

I

V

F

0.9

1.2

1.4

V

Input Current (Detector Must be Off)

I

I

F

525

-

A

Electrical Characteristics @25ºC: Detector Section

Parameter

Conditions

Symbol

Min

Typ

Max

Units

Reverse Voltage

-

V

RD

-

-

100

V

Forward Voltage Drop

I

V

FD

-

-

1.5

V

Reverse Leakage Current

T

I

RD

--

10

A

T

-

-

50

Forward Current

Continuous

-

I

FD

-

-

140

mA

Peak

t=10ms

-

-

500

Electrical Characteristics @25ºC (Unless Otherwise Noted): Bridge Rectifier Section

Electrical Characteristics @25ºC: Darlington Transistor Section

Parameter

Conditions

Symbol

Min

Typ

Max

Units

Collector-Emitter Voltage

I

V

CEO

40

-

-

V

Collector Current, Continuous

V

I

C

-

-

120

mA

Power Dissipation

-

P

D

-

-

500

mW

Off-State Collector-Emitter Leakage Current

V

I

CEX

--

1

A

DC Current Gain

V

h

FE

10,000

-

-

-

Saturation Voltage

I

V

CE(sat)

-

-

1.5

V

Total Harmonic Distortion

I

-

-

-

-80

dB