NXP Semiconductors

BUK9Y41-80E

N-channel 80 V, 45 mΩ logic level MOSFET in LFPAK56

BUK9Y41-80E

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Product data sheet

20 February 2013

7 / 13

003aaj102

0

0.5

1

1.5

2

2.5

3

3.5

4

0

8

16

24

32

40

(A)

(A)

175°C

175°C

Fig. 8. Transfer characteristics; drain current as a

function of gate-source voltage; typical values

003aah025

0

0.5

1

1.5

2

2.5

3

-60

0

60

120

180

(V)

max

typ

min

Fig. 9. Gate-source threshold voltage as a function of

junction temperature

003aah026

0

1

2

3

(A)

max

typ

min

Fig. 10. Sub-threshold drain current as a function of

gate-source voltage

003aaj105

0

5

10

15

20

25

20

40

60

80

100

2.6 V

2.6 V

2.8 V

2.8 V

3 V

3 V

3.5 V

3.5 V

4.5 V

4.5 V

Fig. 11. Drain-source on-state resistance as a function

of drain current; typical values