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C3225X5R0J476M Datasheet(PDF) 5 Page - Richtek Technology Corporation |
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C3225X5R0J476M Datasheet(HTML) 5 Page - Richtek Technology Corporation |
5 / 15 page RT7272B 5 DS7272B-01 January 2013 www.richtek.com Copyright 2013 Richtek Technology Corporation. All rights reserved. is a registered trademark of Richtek Technology Corporation. © Note 1. Stresses beyond those listed “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions may affect device reliability. Note 2. θJA is measured at TA = 25°C on a high effective thermal conductivity four-layer test board per JEDEC 51-7. θJC is measured at the exposed pad of the package. Note 3. Devices are ESD sensitive. Handling precaution is recommended. Note 4. The device is not guaranteed to function outside its operating conditions. Note 5. RLIM (k Ω) = [UOC x 24.14 x (1 + 0.024 x (UOC − 3.5)) − 1.3], where UOC is desired upper switch peak current limit value. Parameter Symbol Test Conditions Min Typ Max Unit Oscillation Frequency fOSC1 450 500 550 kHz Short Circuit Oscillation Frequency fOSC2 VFB = 0V -- 75 -- kHz Maximum Duty Cycle DMAX VFB = 0.7V -- 90 -- % Minimum On-Time tON -- 100 -- ns Logic-High VIH 2 -- -- EN Input Voltage Logic-Low VIL -- -- 0.4 V Input Under Voltage Lockout Threshold VUVLO VIN Rising 3.9 4.1 4.3 V Input Under Voltage Lockout Hysteresis ΔVUVLO -- 250 -- mV Thermal Shutdown TSD -- 150 -- °C Thermal Shutdown Hysteresis ΔTSD -- 20 -- °C COMP to Current Sense Transconductance GCS ΔICOMP = ±10μA -- 4.7 -- A/V Error Amplifier Transconductance GEA -- 1000 -- μA/V |
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