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5962-88630023A Datasheet(PDF) 7 Page - Analog Devices |
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5962-88630023A Datasheet(HTML) 7 Page - Analog Devices |
7 / 22 page AMP01 –7– REV. D ELECTRICAL CHARACTERISTICS (@ V S = 15 V, RS = 10 k , RL = 2 k , TA = +25 C, unless otherwise noted) AMP01NBC AMP01GBC Parameter Symbol Conditions Typical Typical Units Input Offset Voltage Drift TCVIOS 0.15 0.30 µV/°C Output Offset Voltage Drift TCVOOS RG = ∞ 20 50 µV/°C Input Bias Current Drift TCIB 40 50 pA/ °C Input Offset Current Drift TCIOS 3 5 pA/ °C Nonlinearity G = 1000 0.0007 0.0007 % Voltage Noise Density en G = 1000 fO = 1 kHz 5 5 nV/ √Hz Current Noise Density in G = 1000 fO = 1 kHz 0.15 0.15 pA/ √Hz Voltage Noise en p-p G = 1000 0.1 Hz to 10 Hz 0.12 0.12 µV p-p Current Noise in p-p G = 1000 2 2 pA p-p 0.1 Hz to 10 Hz Small-Signal Bandwidth (–3 dB) BW G = 1000 26 26 kHz Slew Rate SR G = 10 4.5 4.5 V/ µs Settling Time tS To 0.01%, 20 V Step G = 1000 50 50 µs NOTE Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed for standard product dice. Consult factory to negotiate specifications based on dice lot qualification through sample lot assembly and testing. |
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