BUFFER

Buffer3

Buffer2

Buffer1

Buffer0

128 x 32-bit EEPROM

Pages

0–7,

P[2:0]

Page_Reg

P[2:0]

bq2028

www.ti.com

SLUSB22B – OCTOBER 2012 – REVISED NOVEMBER 2012

EEPROM Access

The bq2028 provides 512 bytes of EEPROM non-volatile memory storage organized as 128 words x 32 bits. Due

to the address limitations of the HDQ interface protocol, the EEPROM is accessed in 8 pages, with 16 rows of 4

bytes each. For IC manufacturing and analog trim data, 16 bytes or 4 words are reserved in last page of data.

The access model terminology is listed below:

EEPROM

=

128x32-bit (512 bytes) non-volatile memory with paged access

BUFFER

=

32-bit long word in 4x8b volatile Buffer

C

=

2-bit byte Column index for Buffer: C[1:0]

Buffer[C]

=

8-bit access to BUFFER at index C. MSB is at byte indexed by C='11‘.

P

=

3-bit Page index for EEPROM: P[2:0] (8 pages/EEPROM)

PAGE[P]

=

16x32-bit rows (64 bytes) from EEPROM indexed by [P]

R

=

4-bit Row index for EEPROM: R[3:0] (16 rows/page)

ROW[P,R]

=

32-bit long word from EEPROM indexed by [P,R]

Pre-Fetch

=

Automatic copy of an ROW[P,R] to BUFFER before read/write operation

M

=

Mapping operations to access BUFFER and EEPROM: M[1:0]

Figure 11. Memory Map

Copyright © 2012, Texas Instruments Incorporated

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