MAT03 datasheet(6/12 Pages) AD | Low Noise, Matched Dual PNP Transistor

6 page

–6–

REV. B

MAT03

Figure 12. SPICE or SABER Model

APPLICATIONS INFORMATION

MAT03 MODELS

The MAT03 model (Figure 12) includes parasitic diodes D3

through D6. D1 and D2 are internal protection diodes which

prevent zenering of the base-emitter junctions.

The analysis programs, SPICE and SABER, are primarily used

in evaluating the functional performance of systems. The mod-

els are provided only as an aid in utilizing these simulation

programs.

MAT03 NOISE MEASUREMENT

All resistive components (Johnson noise, en

2 = 4kTBR, or e

n =

0.13

√R nV/√Hz, where R is in kΩ) and semiconductor junctions

(Shot noise, caused by current flowing through a junction, pro-

duces voltage noise in series impedances such as transistor-

collector load resistors, In = 0.566 √I pA/√Hz where I is in µA)

contribute to the system input noise.

Figure 13 illustrates a technique for measuring the equivalent

input noise voltage of the MAT03. 1 mA of stage current is used

Figure 13. MAT03 Voltage Noise Measurement Circuit

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